Ultimate-scaled one-dimensional transistors: Surpassing the subthreshold swing limit

The continuous miniaturization of field-effect transistors (FETs) has propelled microprocessors to unprecedented levels of integration. However, further scaling encounters a critical trade-off between integration density and power efficiency. To transcend this limitation, a new class of steep-slope...

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Bibliographic Details
Main Authors: Weiming Zhang, Jian Zhou, Bing Wang, Yuqi Sun, Zhimei Sun
Format: Article
Language:English
Published: Elsevier 2024-09-01
Series:Computational Materials Today
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Online Access:http://www.sciencedirect.com/science/article/pii/S2950463524000085
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