Optimization of Multi-Fins FinFET Implemented on SOI Wafer Based on SiGe and Gaussian Process Regression
Despite advancements in mitigating the short channel effect using high-k materials, multi-gate structures, and silicon-germanium (SiGe) alloys in three-dimensional FinFETs, performance trade-offs remain. This study introduces a novel machine learning framework utilizing a Gaussian process regression...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10741230/ |
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