Crack propagation in micro-chevron-test samples of direct bonded silicon-silicon wafers
Wafer bonding describes all technologies for joining two or more substrates directly or using certain intermediate layers. Current investigations are focused on so-called low temperature bonding as a special direct bonding technology. It is carried out without intermediate layers and at temperatures...
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| Format: | Article |
| Language: | English |
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Gruppo Italiano Frattura
2011-01-01
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| Series: | Fracture and Structural Integrity |
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| Online Access: | http://www.gruppofrattura.it/pdf/rivista/numero15/numero_15_art_3.pdf |
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| _version_ | 1841562835826507776 |
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| author | Detlef Billep Jan Mehner Alexey Shaporin Klaus Vogel Dirk Wuensch Maik Wiemer |
| author_facet | Detlef Billep Jan Mehner Alexey Shaporin Klaus Vogel Dirk Wuensch Maik Wiemer |
| author_sort | Detlef Billep |
| collection | DOAJ |
| description | Wafer bonding describes all technologies for joining two or more substrates directly or using certain intermediate layers. Current investigations are focused on so-called low temperature bonding as a special direct bonding technology. It is carried out without intermediate layers and at temperatures below 400 °C. In addition to the wafer materials, the toughness of the bonded interface also depends on the bonding process itself. It can vary for different pre-treatments. Furthermore, an increase of the annealing temperature leads to a higher toughness of the bonded interface.The fracture toughness is a suitable value to describe the damage behaviour of the bonded interface. Based on a micro-chevron-specimen, the fracture toughness can be determined either numerically or by combining numerical analysis with experimental measurement of the maximum force. The maximum force is measured during a micro-chevron-test using a Mode I loading. The minimum of the stress intensity coefficient can be determined by a FE-simulation only. One possibility to estimate the stress intensity coefficient is the compliance method. The compliance of the whole specimen increases with a growing crack. The stress intensity coefficient can be directly derived from the simulated compliance and the crack length itself.The paper is focused on the micro-chevron-test for direct bonded silicon-silicon wafers. Additional to the estimation of dimensionless stress intensity coefficient as a function of geometry, the influence of different pre-treatments and annealing temperatures on the measured maximum force are analysed and discussed. |
| format | Article |
| id | doaj-art-395350ecfe1c44a8b2698fcfcbecf771 |
| institution | Kabale University |
| issn | 1971-8993 |
| language | English |
| publishDate | 2011-01-01 |
| publisher | Gruppo Italiano Frattura |
| record_format | Article |
| series | Fracture and Structural Integrity |
| spelling | doaj-art-395350ecfe1c44a8b2698fcfcbecf7712025-01-03T00:39:38ZengGruppo Italiano FratturaFracture and Structural Integrity1971-89932011-01-015152128Crack propagation in micro-chevron-test samples of direct bonded silicon-silicon wafersDetlef BillepJan MehnerAlexey ShaporinKlaus VogelDirk WuenschMaik WiemerWafer bonding describes all technologies for joining two or more substrates directly or using certain intermediate layers. Current investigations are focused on so-called low temperature bonding as a special direct bonding technology. It is carried out without intermediate layers and at temperatures below 400 °C. In addition to the wafer materials, the toughness of the bonded interface also depends on the bonding process itself. It can vary for different pre-treatments. Furthermore, an increase of the annealing temperature leads to a higher toughness of the bonded interface.The fracture toughness is a suitable value to describe the damage behaviour of the bonded interface. Based on a micro-chevron-specimen, the fracture toughness can be determined either numerically or by combining numerical analysis with experimental measurement of the maximum force. The maximum force is measured during a micro-chevron-test using a Mode I loading. The minimum of the stress intensity coefficient can be determined by a FE-simulation only. One possibility to estimate the stress intensity coefficient is the compliance method. The compliance of the whole specimen increases with a growing crack. The stress intensity coefficient can be directly derived from the simulated compliance and the crack length itself.The paper is focused on the micro-chevron-test for direct bonded silicon-silicon wafers. Additional to the estimation of dimensionless stress intensity coefficient as a function of geometry, the influence of different pre-treatments and annealing temperatures on the measured maximum force are analysed and discussed.http://www.gruppofrattura.it/pdf/rivista/numero15/numero_15_art_3.pdfCompliance methodFE-analysisFracture toughnessMicro-chevron-testSilicon direct bonding |
| spellingShingle | Detlef Billep Jan Mehner Alexey Shaporin Klaus Vogel Dirk Wuensch Maik Wiemer Crack propagation in micro-chevron-test samples of direct bonded silicon-silicon wafers Fracture and Structural Integrity Compliance method FE-analysis Fracture toughness Micro-chevron-test Silicon direct bonding |
| title | Crack propagation in micro-chevron-test samples of direct bonded silicon-silicon wafers |
| title_full | Crack propagation in micro-chevron-test samples of direct bonded silicon-silicon wafers |
| title_fullStr | Crack propagation in micro-chevron-test samples of direct bonded silicon-silicon wafers |
| title_full_unstemmed | Crack propagation in micro-chevron-test samples of direct bonded silicon-silicon wafers |
| title_short | Crack propagation in micro-chevron-test samples of direct bonded silicon-silicon wafers |
| title_sort | crack propagation in micro chevron test samples of direct bonded silicon silicon wafers |
| topic | Compliance method FE-analysis Fracture toughness Micro-chevron-test Silicon direct bonding |
| url | http://www.gruppofrattura.it/pdf/rivista/numero15/numero_15_art_3.pdf |
| work_keys_str_mv | AT detlefbillep crackpropagationinmicrochevrontestsamplesofdirectbondedsiliconsiliconwafers AT janmehner crackpropagationinmicrochevrontestsamplesofdirectbondedsiliconsiliconwafers AT alexeyshaporin crackpropagationinmicrochevrontestsamplesofdirectbondedsiliconsiliconwafers AT klausvogel crackpropagationinmicrochevrontestsamplesofdirectbondedsiliconsiliconwafers AT dirkwuensch crackpropagationinmicrochevrontestsamplesofdirectbondedsiliconsiliconwafers AT maikwiemer crackpropagationinmicrochevrontestsamplesofdirectbondedsiliconsiliconwafers |