Simple Modeling of the Ratio of Fields at a Tip and a Contacting Surface with External Illumination
The analysis of the relation of fields generated at a tip and a contacting surface is performed in the Rayleigh approximation of a simple dipole model for the standard configuration of tip-enhanced Raman scattering experiments with external excitation. A comparison of the present results with the pr...
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Format: | Article |
Language: | English |
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Wiley
2018-01-01
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Series: | Journal of Nanotechnology |
Online Access: | http://dx.doi.org/10.1155/2018/3898524 |
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author | E. Bortchagovsky |
author_facet | E. Bortchagovsky |
author_sort | E. Bortchagovsky |
collection | DOAJ |
description | The analysis of the relation of fields generated at a tip and a contacting surface is performed in the Rayleigh approximation of a simple dipole model for the standard configuration of tip-enhanced Raman scattering experiments with external excitation. A comparison of the present results with the previous ones obtained for the case of tip-source reveals the role of tip-surface configuration as the amplifier of the exciting field and the stronger influence of roughness on the field distribution at external illumination, as roughness is directly excited by the external field producing second source of field in addition to the tip. |
format | Article |
id | doaj-art-3793f73549c14a409b4fa9cd63b54368 |
institution | Kabale University |
issn | 1687-9503 1687-9511 |
language | English |
publishDate | 2018-01-01 |
publisher | Wiley |
record_format | Article |
series | Journal of Nanotechnology |
spelling | doaj-art-3793f73549c14a409b4fa9cd63b543682025-02-03T05:47:09ZengWileyJournal of Nanotechnology1687-95031687-95112018-01-01201810.1155/2018/38985243898524Simple Modeling of the Ratio of Fields at a Tip and a Contacting Surface with External IlluminationE. Bortchagovsky0Institute of Semiconductor Physics of NAS of Ukraine, Pr.Nauki 41, Kyiv 03028, UkraineThe analysis of the relation of fields generated at a tip and a contacting surface is performed in the Rayleigh approximation of a simple dipole model for the standard configuration of tip-enhanced Raman scattering experiments with external excitation. A comparison of the present results with the previous ones obtained for the case of tip-source reveals the role of tip-surface configuration as the amplifier of the exciting field and the stronger influence of roughness on the field distribution at external illumination, as roughness is directly excited by the external field producing second source of field in addition to the tip.http://dx.doi.org/10.1155/2018/3898524 |
spellingShingle | E. Bortchagovsky Simple Modeling of the Ratio of Fields at a Tip and a Contacting Surface with External Illumination Journal of Nanotechnology |
title | Simple Modeling of the Ratio of Fields at a Tip and a Contacting Surface with External Illumination |
title_full | Simple Modeling of the Ratio of Fields at a Tip and a Contacting Surface with External Illumination |
title_fullStr | Simple Modeling of the Ratio of Fields at a Tip and a Contacting Surface with External Illumination |
title_full_unstemmed | Simple Modeling of the Ratio of Fields at a Tip and a Contacting Surface with External Illumination |
title_short | Simple Modeling of the Ratio of Fields at a Tip and a Contacting Surface with External Illumination |
title_sort | simple modeling of the ratio of fields at a tip and a contacting surface with external illumination |
url | http://dx.doi.org/10.1155/2018/3898524 |
work_keys_str_mv | AT ebortchagovsky simplemodelingoftheratiooffieldsatatipandacontactingsurfacewithexternalillumination |