Research on the Effect of Stress on IGBT Electrical Characteristics and the Source of Stress
Based on the deformation potential theory, it analyzed the band gap narrowing effect and mobility enhancement effect of silicon-base device under stress. The effect of the stress on electrical characteristics of the IGBT was studied with the IGBT chip model building, and the source of stress was als...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2015-01-01
|
| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2015.02.014 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|