APA (7th ed.) Citation

Wu, Y., Ma, X., Yu, L., Feng, X., Zhao, S., Zhang, W., . . . Hao, Y. High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate. MDPI AG.

Chicago Style (17th ed.) Citation

Wu, Yinhe, Xingchi Ma, Longyang Yu, Xin Feng, Shenglei Zhao, Weihang Zhang, Jincheng Zhang, and Yue Hao. High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate. MDPI AG.

MLA (9th ed.) Citation

Wu, Yinhe, et al. High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate. MDPI AG.