High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate

High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate

In this paper, it is demonstrated that the AlGaN high electron mobility transistor (HEMT) based on silicon wafer exhibits excellent high-temperature performance. First, the output characteristics show that the ratio of on-resistance (<i>R</i><sub>ON</sub>) only reaches 1.55 w...

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Bibliographic Details
Main Authors: Yinhe Wu, Xingchi Ma, Longyang Yu, Xin Feng, Shenglei Zhao, Weihang Zhang, Jincheng Zhang, Yue Hao
Format: Article
Language:English
Published: MDPI AG 2024-10-01
Series:Micromachines
Subjects:
AlGaN channel high electron mobility transistor
high temperature
trap states
carrier mobility
Online Access:https://www.mdpi.com/2072-666X/15/11/1343
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