Out‐Diffusion and Uphill‐Diffusion of Mg in Czochralski‐Grown (100) β‐Ga2O3 Under High‐Temperature Annealing and Its Influence on Lateral MOSFET Devices

Out‐Diffusion and Uphill‐Diffusion of Mg in Czochralski‐Grown (100) β‐Ga2O3 Under High‐Temperature Annealing and Its Influence on Lateral MOSFET Devices

Abstract In this work, the out‐diffusion and uphill‐diffusion of Mg inside (100) β‐Ga2O3 epilayers and substrates are reported. The Mg accumulates toward the (100) surface upon annealing under an oxidizing environment, whereas the concentration profile changes with annealing temperatures and duratio...

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Bibliographic Details
Main Authors: Ta‐Shun Chou, Thi Thuy Vi Tran, Hartwin Peelaers, Kornelius Tetzner, Oliver Hilt, Jana Rehm, Saud Bin Anooz, Andreas Fiedler, Zbigniew Galazka, Martin Albrecht, Andreas Popp
Format: Article
Language:English
Published: Wiley-VCH 2025-01-01
Series:Advanced Electronic Materials
Subjects:
β‐Ga2O3
diffusion
MOVPE
Online Access:https://doi.org/10.1002/aelm.202400342
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https://doi.org/10.1002/aelm.202400342

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