Back-end-of-line compatible Hf0.5Zr0.5O2 ferroelectric devices enabled by microwave annealing

Back-end-of-line compatible Hf0.5Zr0.5O2 ferroelectric devices enabled by microwave annealing

In this work, we demonstrate an extremely low annealing processing at 300 °C for the crystallization of Hf0.5Zr0.5O2 (HZO) films with the adoption of microwave annealing (MWA). Compared to conventional annealing methods, an enhanced double remnant polarization (2Pr) of 55.4 μC/cm2, a higher maximum...

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Bibliographic Details
Main Authors: Yinchi Liu, Hao Zhang, Jining Yang, Dmitriy Anatolyevich Golosov, Xiaohan Wu, Chenjie Gu, Shijin Ding, Wenjun Liu
Format: Article
Language:English
Published: Elsevier 2025-03-01
Series:Chip
Subjects:
Microwave annealing
Hf0.5Zr0.5O2
Ferroelectric capacitors
Remnant polarization
Back-end of line
Online Access:http://www.sciencedirect.com/science/article/pii/S2709472324000388
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