Micropyramid Vertical Ultraviolet GaN/AlGaN Multiple Quantum Wells LEDs on Si(111)
Micropyramid vertical GaN-based ultraviolet (UV) light-emitting diodes (LEDs) on Si(111) substrate have been fabricated by selective area growth to reduce threading dislocations and the polarization effects. There is no-light emission at the bottom and six planes of the pyramid at lower current due...
Saved in:
| Main Authors: | , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-01-01
|
| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2021/9990673 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|