Influence of resonant plasmonic nanoparticles on optically accessing the valley degree of freedom in 2D semiconductors

Influence of resonant plasmonic nanoparticles on optically accessing the valley degree of freedom in 2D semiconductors

Abstract The valley degree of freedom in atomically thin transition metal dichalcogenides, coupled with valley-contrasting optical selection rules, holds great potential for future electronic and optoelectronic devices. Resonant optical nanostructures emerge as promising tools for controlling this d...

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Main Authors: Tobias Bucher, Zlata Fedorova, Mostafa Abasifard, Rajeshkumar Mupparapu, Matthias J. Wurdack, Emad Najafidehaghani, Ziyang Gan, Heiko Knopf, Antony George, Falk Eilenberger, Thomas Pertsch, Andrey Turchanin, Isabelle Staude
Format: Article
Language:English
Published: Nature Portfolio 2024-11-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-024-54359-y
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https://doi.org/10.1038/s41467-024-54359-y

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