Relaxation Digital-to-Analog Converters Featuring Self-Calibration and Parasitics-Induced Error Suppression in 180-nm CMOS

The design and the silicon characterization of two mostly digital, low-voltage, energy- and area-efficient Relaxation Digital-to-Analog Converters (ReDACs) in 180nm featuring digital self-calibration and parasitics-induced error suppression are presented and compared in this paper. The first design...

Full description

Saved in:
Bibliographic Details
Main Authors: Roberto Rubino, Francesco Musolino, Pedro Toledo, Yong Chen, Anna Richelli, Paolo S. Crovetti
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Access
Subjects:
Online Access:https://ieeexplore.ieee.org/document/10829600/
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1841536159521439744
author Roberto Rubino
Francesco Musolino
Pedro Toledo
Yong Chen
Anna Richelli
Paolo S. Crovetti
author_facet Roberto Rubino
Francesco Musolino
Pedro Toledo
Yong Chen
Anna Richelli
Paolo S. Crovetti
author_sort Roberto Rubino
collection DOAJ
description The design and the silicon characterization of two mostly digital, low-voltage, energy- and area-efficient Relaxation Digital-to-Analog Converters (ReDACs) in 180nm featuring digital self-calibration and parasitics-induced error suppression are presented and compared in this paper. The first design is a single-ended ReDAC (SE-ReDAC) and operates at 880kS/s with a 10-bit resolution, while the second is based on a differential ReDAC (Diff-ReDAC) architecture and operates at 100kS/s with a 13-bit resolution. The SE-ReDAC testchip in 180nm occupies just 5,030<inline-formula> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula> m2 and operates with a supply voltage ranging from 0.6V to 1V. Experimental results at 0.65V reveal a 72.18dB-SFDR, a 65.59dB-THD and a 56.09dB SINAD, resulting in 9.02ENOB, with a power dissipation of just <inline-formula> <tex-math notation="LaTeX">$3.3\mu $ </tex-math></inline-formula> W, achieving a competitive energy-efficiency (area-normalized energy efficiency) figure of merit FOM (<inline-formula> <tex-math notation="LaTeX">$\mathrm {FOM_{A}}$ </tex-math></inline-formula>) of 166dB (175dB). On the other hand, the 180-nm Diff-ReDAC testchip occupies 7,800<inline-formula> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula> m2 and operates in a supply voltage range from 0.45V to 1V, while achieving a 77.81dB-SFDR, a 77.52dB-THD and a 65.82dB-SINAD (10.64ENOB) at 0.6V supply with a power consumption of just 880nW, leading to a very competitive FOM (FOMA) of 172dB (178dB).
format Article
id doaj-art-1eeb864228e44ae797bad68c50186cf5
institution Kabale University
issn 2169-3536
language English
publishDate 2025-01-01
publisher IEEE
record_format Article
series IEEE Access
spelling doaj-art-1eeb864228e44ae797bad68c50186cf52025-01-15T00:02:22ZengIEEEIEEE Access2169-35362025-01-01136594660510.1109/ACCESS.2025.352620910829600Relaxation Digital-to-Analog Converters Featuring Self-Calibration and Parasitics-Induced Error Suppression in 180-nm CMOSRoberto Rubino0Francesco Musolino1https://orcid.org/0000-0001-9960-4653Pedro Toledo2https://orcid.org/0000-0002-5084-491XYong Chen3Anna Richelli4https://orcid.org/0000-0003-4269-1228Paolo S. Crovetti5https://orcid.org/0000-0002-2484-1686Analog Devices, Bari, ItalyDepartment of Electronics and Telecommunications (DET), Politecnico di Torino, Turin, ItalySynopsys, Lisbon, PortugalDepartment of Electronic Engineering, Tsinghua University, Beijing, ChinaDepartment of Information Engineering, University of Brescia, Brescia, ItalyDepartment of Electronics and Telecommunications (DET), Politecnico di Torino, Turin, ItalyThe design and the silicon characterization of two mostly digital, low-voltage, energy- and area-efficient Relaxation Digital-to-Analog Converters (ReDACs) in 180nm featuring digital self-calibration and parasitics-induced error suppression are presented and compared in this paper. The first design is a single-ended ReDAC (SE-ReDAC) and operates at 880kS/s with a 10-bit resolution, while the second is based on a differential ReDAC (Diff-ReDAC) architecture and operates at 100kS/s with a 13-bit resolution. The SE-ReDAC testchip in 180nm occupies just 5,030<inline-formula> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula> m2 and operates with a supply voltage ranging from 0.6V to 1V. Experimental results at 0.65V reveal a 72.18dB-SFDR, a 65.59dB-THD and a 56.09dB SINAD, resulting in 9.02ENOB, with a power dissipation of just <inline-formula> <tex-math notation="LaTeX">$3.3\mu $ </tex-math></inline-formula> W, achieving a competitive energy-efficiency (area-normalized energy efficiency) figure of merit FOM (<inline-formula> <tex-math notation="LaTeX">$\mathrm {FOM_{A}}$ </tex-math></inline-formula>) of 166dB (175dB). On the other hand, the 180-nm Diff-ReDAC testchip occupies 7,800<inline-formula> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula> m2 and operates in a supply voltage range from 0.45V to 1V, while achieving a 77.81dB-SFDR, a 77.52dB-THD and a 65.82dB-SINAD (10.64ENOB) at 0.6V supply with a power consumption of just 880nW, leading to a very competitive FOM (FOMA) of 172dB (178dB).https://ieeexplore.ieee.org/document/10829600/D/A converter (DAC)relaxation D/A converter (ReDAC)ultra-low areadigital-basedultra-low powerultra-low voltage
spellingShingle Roberto Rubino
Francesco Musolino
Pedro Toledo
Yong Chen
Anna Richelli
Paolo S. Crovetti
Relaxation Digital-to-Analog Converters Featuring Self-Calibration and Parasitics-Induced Error Suppression in 180-nm CMOS
IEEE Access
D/A converter (DAC)
relaxation D/A converter (ReDAC)
ultra-low area
digital-based
ultra-low power
ultra-low voltage
title Relaxation Digital-to-Analog Converters Featuring Self-Calibration and Parasitics-Induced Error Suppression in 180-nm CMOS
title_full Relaxation Digital-to-Analog Converters Featuring Self-Calibration and Parasitics-Induced Error Suppression in 180-nm CMOS
title_fullStr Relaxation Digital-to-Analog Converters Featuring Self-Calibration and Parasitics-Induced Error Suppression in 180-nm CMOS
title_full_unstemmed Relaxation Digital-to-Analog Converters Featuring Self-Calibration and Parasitics-Induced Error Suppression in 180-nm CMOS
title_short Relaxation Digital-to-Analog Converters Featuring Self-Calibration and Parasitics-Induced Error Suppression in 180-nm CMOS
title_sort relaxation digital to analog converters featuring self calibration and parasitics induced error suppression in 180 nm cmos
topic D/A converter (DAC)
relaxation D/A converter (ReDAC)
ultra-low area
digital-based
ultra-low power
ultra-low voltage
url https://ieeexplore.ieee.org/document/10829600/
work_keys_str_mv AT robertorubino relaxationdigitaltoanalogconvertersfeaturingselfcalibrationandparasiticsinducederrorsuppressionin180nmcmos
AT francescomusolino relaxationdigitaltoanalogconvertersfeaturingselfcalibrationandparasiticsinducederrorsuppressionin180nmcmos
AT pedrotoledo relaxationdigitaltoanalogconvertersfeaturingselfcalibrationandparasiticsinducederrorsuppressionin180nmcmos
AT yongchen relaxationdigitaltoanalogconvertersfeaturingselfcalibrationandparasiticsinducederrorsuppressionin180nmcmos
AT annarichelli relaxationdigitaltoanalogconvertersfeaturingselfcalibrationandparasiticsinducederrorsuppressionin180nmcmos
AT paoloscrovetti relaxationdigitaltoanalogconvertersfeaturingselfcalibrationandparasiticsinducederrorsuppressionin180nmcmos