Analysis of Cubic Boron Nitride Single Crystal Defects Growth under High Temperature and High Pressure

Cubic boron nitride (cBN) single crystals are synthesized under high temperature and high pressure in the Li-based system. The growth defects on hexagonal and triangular (111) surfaces of cBN single crystals after rapid cooling are discussed systemically for the first time using the atomic force mic...

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Main Authors: Lichao Cai, Bin Xu, Meizhe Lv, Feng Jia, Xingdong Yuan
Format: Article
Language:English
Published: Wiley 2020-01-01
Series:Journal of Chemistry
Online Access:http://dx.doi.org/10.1155/2020/7853623
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author Lichao Cai
Bin Xu
Meizhe Lv
Feng Jia
Xingdong Yuan
author_facet Lichao Cai
Bin Xu
Meizhe Lv
Feng Jia
Xingdong Yuan
author_sort Lichao Cai
collection DOAJ
description Cubic boron nitride (cBN) single crystals are synthesized under high temperature and high pressure in the Li-based system. The growth defects on hexagonal and triangular (111) surfaces of cBN single crystals after rapid cooling are discussed systemically for the first time using the atomic force microscope. Some impurity particles, triangle cone hole defects, lamellar-fault structures, and big steps are obvious on the surfaces of cBN single crystals. The formation mechanism of these defects is analyzed briefly at the synthetic process of cBN single crystals, and the growth mechanism of cBN single crystals transform from the two-dimensional growth to dislocation growth mechanism under high temperature and high pressure.
format Article
id doaj-art-1c55b8c7a41c425c9410e12d7a0580a3
institution Kabale University
issn 2090-9063
2090-9071
language English
publishDate 2020-01-01
publisher Wiley
record_format Article
series Journal of Chemistry
spelling doaj-art-1c55b8c7a41c425c9410e12d7a0580a32025-08-20T03:54:51ZengWileyJournal of Chemistry2090-90632090-90712020-01-01202010.1155/2020/78536237853623Analysis of Cubic Boron Nitride Single Crystal Defects Growth under High Temperature and High PressureLichao Cai0Bin Xu1Meizhe Lv2Feng Jia3Xingdong Yuan4School of Materials Science and Engineering, Shandong University, Jinan 250101, ChinaSchool of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101, ChinaSchool of Materials Science and Engineering, Shandong University, Jinan 250101, ChinaSchool of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101, ChinaSchool of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101, ChinaCubic boron nitride (cBN) single crystals are synthesized under high temperature and high pressure in the Li-based system. The growth defects on hexagonal and triangular (111) surfaces of cBN single crystals after rapid cooling are discussed systemically for the first time using the atomic force microscope. Some impurity particles, triangle cone hole defects, lamellar-fault structures, and big steps are obvious on the surfaces of cBN single crystals. The formation mechanism of these defects is analyzed briefly at the synthetic process of cBN single crystals, and the growth mechanism of cBN single crystals transform from the two-dimensional growth to dislocation growth mechanism under high temperature and high pressure.http://dx.doi.org/10.1155/2020/7853623
spellingShingle Lichao Cai
Bin Xu
Meizhe Lv
Feng Jia
Xingdong Yuan
Analysis of Cubic Boron Nitride Single Crystal Defects Growth under High Temperature and High Pressure
Journal of Chemistry
title Analysis of Cubic Boron Nitride Single Crystal Defects Growth under High Temperature and High Pressure
title_full Analysis of Cubic Boron Nitride Single Crystal Defects Growth under High Temperature and High Pressure
title_fullStr Analysis of Cubic Boron Nitride Single Crystal Defects Growth under High Temperature and High Pressure
title_full_unstemmed Analysis of Cubic Boron Nitride Single Crystal Defects Growth under High Temperature and High Pressure
title_short Analysis of Cubic Boron Nitride Single Crystal Defects Growth under High Temperature and High Pressure
title_sort analysis of cubic boron nitride single crystal defects growth under high temperature and high pressure
url http://dx.doi.org/10.1155/2020/7853623
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