Stress control in trench field-plate power MOSFETs and its impact on on-resistance reduction

The limitations regarding lateral cell pitch narrowing and on-resistance reduction were investigated. Trench field plate MOSFETs feature deep trenches with thick oxide films. This disrupts the stress balance, leading to significant wafer warpage, which poses a critical challenge in device integratio...

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Bibliographic Details
Main Authors: Hiroaki Kato, Shin-ichi Nishizawa, Wataru Saito
Format: Article
Language:English
Published: Elsevier 2025-06-01
Series:Power Electronic Devices and Components
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Online Access:http://www.sciencedirect.com/science/article/pii/S277237042500015X
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