Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes
Temperature-dependent reverse-bias current-voltage characteristics obtained by other researchers for Schottky diodes fabricated on GaN are reinterpreted in terms of phonon-assisted tunneling (PhAT) model. Temperature dependence of reverse-bias leakage current is shown could be caused by the temperat...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2010-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2010/526929 |
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