The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications

The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications

In this paper, AlGaN/GaN high electron mobility transistors (HEMTs) with different thicknesses of unintentional doping GaN (UID-GaN) channels were compared and discussed. In order to discuss the effect of different thicknesses of the UID-GaN layer on iron-doped tails, both AlGaN/GaN HEMTs share the...

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Bibliographic Details
Main Authors: Qian Yu, Sheng Wu, Meng Zhang, Ling Yang, Xu Zou, Hao Lu, Chunzhou Shi, Wenze Gao, Mei Wu, Bin Hou, Gang Qiu, Xiaoning He, Xiaohua Ma, Yue Hao
Format: Article
Language:English
Published: MDPI AG 2024-12-01
Series:Micromachines
Subjects:
GaN
high electron mobility transistors
Fe-doped
UID-GaN
RF peoformance
Online Access:https://www.mdpi.com/2072-666X/16/1/1
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