Effects of Deposition Power and Annealing Temperature on Indium Zinc Oxide (IZO) Film’s Properties and Their Applications to the Source–Drain Electrodes of Amorphous Indium Gallium Zinc Oxide (a-IGZO) Thin-Film Transistors (TFTs)
The optical, electrical, and material properties of In–Zn–O (IZO) films were optimized by adjusting the deposition power and annealing temperature. Films deposited at 125 W and annealed at 300 °C exhibited the best performance, with the lowest resistivity (1.43 × 10<sup>−3</sup> Ω·cm), h...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-05-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/15/11/780 |
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| Summary: | The optical, electrical, and material properties of In–Zn–O (IZO) films were optimized by adjusting the deposition power and annealing temperature. Films deposited at 125 W and annealed at 300 °C exhibited the best performance, with the lowest resistivity (1.43 × 10<sup>−3</sup> Ω·cm), highest mobility (11.12 cm<sup>2</sup>/V·s), and highest carrier concentration (4.61 × 10<sup>20</sup> cm<sup>−3</sup>). The average transmittance and optical energy gap were 82.57% and 3.372 eV, respectively. The electrical characteristics of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) using IZO source-drain (S–D) electrodes with various sputtering powers and annealing temperatures were investigated. The optimal sputtering power of 125 W and annealing temperature of 300 °C for the IZO S–D electrodes resulted in the highest field-effect mobility (~12.31 cm<sup>2</sup>/V·s) and on current (~2.09 × 10<sup>−6</sup> A). This improvement is attributed to enhanced carrier concentration and mobility, which result from the high In/Zn ratio, the larger grain size, and low RMS roughness in the IZO films. The parasitic contact resistance (<i>R<sub>SD</sub></i>) and channel resistance (<i>R<sub>CH</sub></i>) were analyzed using the total resistance method. <i>R<sub>SD</sub></i> decreased with increasing IZO S–D sputtering power, while <i>R<sub>CH</sub></i> reached a minimum at 125 W. Both resistances decreased significantly as the annealing temperature increased from 200 °C to 300 °C. |
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| ISSN: | 2079-4991 |