Effects of Deposition Power and Annealing Temperature on Indium Zinc Oxide (IZO) Film’s Properties and Their Applications to the Source–Drain Electrodes of Amorphous Indium Gallium Zinc Oxide (a-IGZO) Thin-Film Transistors (TFTs)

Effects of Deposition Power and Annealing Temperature on Indium Zinc Oxide (IZO) Film’s Properties and Their Applications to the Source–Drain Electrodes of Amorphous Indium Gallium Zinc Oxide (a-IGZO) Thin-Film Transistors (TFTs)

The optical, electrical, and material properties of In–Zn–O (IZO) films were optimized by adjusting the deposition power and annealing temperature. Films deposited at 125 W and annealed at 300 °C exhibited the best performance, with the lowest resistivity (1.43 × 10<sup>−3</sup> Ω·cm), h...

Full description

Saved in:
Bibliographic Details
Main Authors: Yih-Shing Lee, Chih-Hsiang Chang, Bing-Shin Le, Vo-Truong Thao Nguyen, Tsung-Cheng Tien, Horng-Chih Lin
Format: Article
Language:English
Published: MDPI AG 2025-05-01
Series:Nanomaterials
Subjects:
RF sputtering power
annealing temperature
IZO source-drain (S–D) electrodes
total resistance method
a-IGZO TFTs
Online Access:https://www.mdpi.com/2079-4991/15/11/780
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

https://www.mdpi.com/2079-4991/15/11/780

Similar Items