Skyrmion-based synaptic element with strain-mediated plasticity

Skyrmion-based synaptic element with strain-mediated plasticity

We present a novel skyrmion-based synaptic device featuring a multilayer structure of Ferromagnetic (FM)/Heavy metal (HM)/Ferroelectric (FE)/HM/FM, specifically (Co/Pt) _n /(011)PMN-PT/(Co/Pt) _n . The FE layer sandwiched between the two FM layers hosting the skyrmions enables electric field-induced...

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Bibliographic Details
Main Authors: Jasmine Kaur, Sneh Saurabh, Shubham Sahay
Format: Article
Language:English
Published: IOP Publishing 2025-01-01
Series:Neuromorphic Computing and Engineering
Subjects:
spintronics
skyrmion
multiferroic heterostructure
ferroelectric
piezoelectric
magnetoelectric
Online Access:https://doi.org/10.1088/2634-4386/adf992
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https://doi.org/10.1088/2634-4386/adf992

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