Cryogenic III-V and Nb electronics integrated on silicon for large-scale quantum computing platforms
Abstract Quantum computers now encounter the significant challenge of scalability, similar to the issue that classical computing faced previously. Recent results in high-fidelity spin qubits manufactured with a Si CMOS technology, along with demonstrations that cryogenic CMOS-based control/readout e...
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| Format: | Article |
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Nature Portfolio
2024-12-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-024-55077-1 |
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| author | Jaeyong Jeong Seong Kwang Kim Yoon-Je Suh Jisung Lee Joonyoung Choi Joon Pyo Kim Bong Ho Kim Juhyuk Park Joonsup Shim Nahyun Rheem Chan Jik Lee Younjung Jo Dae-Myeong Geum Seung-Young Park Jongmin Kim Sanghyeon Kim |
| author_facet | Jaeyong Jeong Seong Kwang Kim Yoon-Je Suh Jisung Lee Joonyoung Choi Joon Pyo Kim Bong Ho Kim Juhyuk Park Joonsup Shim Nahyun Rheem Chan Jik Lee Younjung Jo Dae-Myeong Geum Seung-Young Park Jongmin Kim Sanghyeon Kim |
| author_sort | Jaeyong Jeong |
| collection | DOAJ |
| description | Abstract Quantum computers now encounter the significant challenge of scalability, similar to the issue that classical computing faced previously. Recent results in high-fidelity spin qubits manufactured with a Si CMOS technology, along with demonstrations that cryogenic CMOS-based control/readout electronics can be integrated into the same chip or die, opens up an opportunity to break out the challenges of qubit size, I/O, and integrability. However, the power consumption of cryogenic CMOS-based control/readout electronics cannot support thousands or millions of qubits. Here, we show that III–V two-dimensional electron gas and Nb superconductor-based cryogenic electronics can be integrated with Si and operate at extremely low power levels, enabling the control and readout for millions of qubits. Our devices offer a unity gain cutoff frequency of 601 GHz, a unity power gain cutoff frequency of 593 GHz, and a low noise indication factor $$\left(\sqrt{{I}_{{{\rm{D}}}}}\, {g}_{{{{\rm{m}}}}}^{-1}\right)$$ I D g m − 1 of $$0.21\sqrt{{{{\rm{Vmm}}}}}\scriptstyle\sqrt{{S}^{-1}}$$ 0.21 Vmm S − 1 at 4 K using more than 10 times less power consumption than CMOS. |
| format | Article |
| id | doaj-art-0af53918199b491f8de6fb5a23927df8 |
| institution | Kabale University |
| issn | 2041-1723 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-0af53918199b491f8de6fb5a23927df82025-01-05T12:36:01ZengNature PortfolioNature Communications2041-17232024-12-0115111010.1038/s41467-024-55077-1Cryogenic III-V and Nb electronics integrated on silicon for large-scale quantum computing platformsJaeyong Jeong0Seong Kwang Kim1Yoon-Je Suh2Jisung Lee3Joonyoung Choi4Joon Pyo Kim5Bong Ho Kim6Juhyuk Park7Joonsup Shim8Nahyun Rheem9Chan Jik Lee10Younjung Jo11Dae-Myeong Geum12Seung-Young Park13Jongmin Kim14Sanghyeon Kim15School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)Center for Scientific Instrumentation, Korea Basic Science Institute (KBSI)Department of Physics, Kyungpook National University (KNU)School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)Department of Physics, Kyungpook National University (KNU)Department of Electrical Engineering, Inha UniversityCenter for Scientific Instrumentation, Korea Basic Science Institute (KBSI)Division of Device Technology, Korea Advanced Nano Fab Center (KANC)School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)Abstract Quantum computers now encounter the significant challenge of scalability, similar to the issue that classical computing faced previously. Recent results in high-fidelity spin qubits manufactured with a Si CMOS technology, along with demonstrations that cryogenic CMOS-based control/readout electronics can be integrated into the same chip or die, opens up an opportunity to break out the challenges of qubit size, I/O, and integrability. However, the power consumption of cryogenic CMOS-based control/readout electronics cannot support thousands or millions of qubits. Here, we show that III–V two-dimensional electron gas and Nb superconductor-based cryogenic electronics can be integrated with Si and operate at extremely low power levels, enabling the control and readout for millions of qubits. Our devices offer a unity gain cutoff frequency of 601 GHz, a unity power gain cutoff frequency of 593 GHz, and a low noise indication factor $$\left(\sqrt{{I}_{{{\rm{D}}}}}\, {g}_{{{{\rm{m}}}}}^{-1}\right)$$ I D g m − 1 of $$0.21\sqrt{{{{\rm{Vmm}}}}}\scriptstyle\sqrt{{S}^{-1}}$$ 0.21 Vmm S − 1 at 4 K using more than 10 times less power consumption than CMOS.https://doi.org/10.1038/s41467-024-55077-1 |
| spellingShingle | Jaeyong Jeong Seong Kwang Kim Yoon-Je Suh Jisung Lee Joonyoung Choi Joon Pyo Kim Bong Ho Kim Juhyuk Park Joonsup Shim Nahyun Rheem Chan Jik Lee Younjung Jo Dae-Myeong Geum Seung-Young Park Jongmin Kim Sanghyeon Kim Cryogenic III-V and Nb electronics integrated on silicon for large-scale quantum computing platforms Nature Communications |
| title | Cryogenic III-V and Nb electronics integrated on silicon for large-scale quantum computing platforms |
| title_full | Cryogenic III-V and Nb electronics integrated on silicon for large-scale quantum computing platforms |
| title_fullStr | Cryogenic III-V and Nb electronics integrated on silicon for large-scale quantum computing platforms |
| title_full_unstemmed | Cryogenic III-V and Nb electronics integrated on silicon for large-scale quantum computing platforms |
| title_short | Cryogenic III-V and Nb electronics integrated on silicon for large-scale quantum computing platforms |
| title_sort | cryogenic iii v and nb electronics integrated on silicon for large scale quantum computing platforms |
| url | https://doi.org/10.1038/s41467-024-55077-1 |
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