Charge Transport in Blue Quantum Dot Light‐Emitting Diodes
Abstract Although quantum dot light‐emitting diodes (QLEDs) are extensively studied nowadays, their charge transport mechanism remains a subject of ongoing debate. Here, the hole transport in blue quantum dots (QDs) (CdZnSe/ZnSe/ZnS/CdZnS/ZnS based) is investigated by combining current‐voltage and t...
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2024-11-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400142 |
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| Summary: | Abstract Although quantum dot light‐emitting diodes (QLEDs) are extensively studied nowadays, their charge transport mechanism remains a subject of ongoing debate. Here, the hole transport in blue quantum dots (QDs) (CdZnSe/ZnSe/ZnS/CdZnS/ZnS based) is investigated by combining current‐voltage and transient electroluminescence measurements. The study demonstrates that the hole transport in QD thin films is characterized by a trap‐free space‐charge‐limited current with a zero‐field room temperature mobility of 4.4 × 10−11 m2 V−1 s−1. The zero‐field hole mobility is thermally activated with an activation energy of 0.30 eV. Applying the Extended Gaussian Disorder model provides a consistent description of the QD hole current as a function of voltage and temperature. The QD hole mobility is characterized by a hopping distance of 2.8 nm in a Gaussian broadened density of states with a width of 0.12 eV. |
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| ISSN: | 2199-160X |