Synthesis of Cerium Dioxide High-k Thin Films as a Gate Dielectric in MOS Capacitor
In the present study, the Al/CeO2 / p-Si MOS capacitor was fabricated by depositing the Aluminium (Al) metal layer by thermal evaporation technique on sol-gel derived CeO2 high-k thin films on p-Si substrate. The deposited CeO2 films were characterized by Ellipsometer to study the refractive index t...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2013-07-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2013/3/articles/jnep_2013_V5_03002.pdf |
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