Physicochemical conditions for the stability of manganese-doped nanolayers of gallium arsenide and its iso-electronic analogues
In this paper research of stability of nanolayers of manganese doped materials of AIIIBV and AIIBIVСV2 types holding much promise as spintronic semiconductor compounds is described. The method of non-local density functional has been applied to calculate bonding energies {εij (r)} in atomic pairs fo...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Uralʹskij federalʹnyj universitet imeni pervogo Prezidenta Rossii B.N. Elʹcina
2015-03-01
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| Series: | Chimica Techno Acta |
| Subjects: | |
| Online Access: | https://chimicatechnoacta.ru/article/view/1099 |
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