Non‐Volatile Resistive Switching in Nanoscaled Elemental Tellurium by Vapor Transport Deposition on Gold

Non‐Volatile Resistive Switching in Nanoscaled Elemental Tellurium by Vapor Transport Deposition on Gold

Abstract Two‐dimensional (2D) materials are promising for resistive switching in neuromorphic and in‐memory computing, as their atomic thickness substantially improve the energetic budget of the device and circuits. However, many 2D resistive switching materials struggle with complex growth methods...

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Main Authors: Sara Ghomi, Christian Martella, Yoonseok Lee, Penny Hui‐Ping Chang, Paolo Targa, Andrea Serafini, Davide Codegoni, Chiara Massetti, Sepideh Gharedaghi, Alessio Lamperti, Carlo Grazianetti, Deji Akinwande, Alessandro Molle
Format: Article
Language:English
Published: Wiley 2025-01-01
Series:Advanced Science
Subjects:
conductive AFM
memristors
resistive switching
tellurene
tellurium
2D materials
Online Access:https://doi.org/10.1002/advs.202406703
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https://doi.org/10.1002/advs.202406703

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