Effect of chemical bond polarity on wafer and cleavage surface oxidation for GaAs, GaSb, InAs and InSb single crystals
Rapid development of III–V semiconductor device technologies and broadening of device applications are hindered by the high density of surface states produced in those materials by intrinsic complex oxides and surface contaminations. Surface oxides acting as non-radiating recombination centers produ...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Pensoft Publishers
2024-10-01
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| Series: | Modern Electronic Materials |
| Online Access: | https://moem.pensoft.net/article/140714/download/pdf/ |
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