Nitrogen Doping in VO2 Thin Films on Synthetic Mica Substrates Through Mist Chemical Vapor Deposition: Lowering the Metal–Insulator Transition Temperature Toward Smart Windows

Nitrogen Doping in VO2 Thin Films on Synthetic Mica Substrates Through Mist Chemical Vapor Deposition: Lowering the Metal–Insulator Transition Temperature Toward Smart Windows

Abstract In this study, nitrogen (N) is doped into VO2 thin films through mist chemical vapor deposition (CVD), and the effect of the doping on metal–insulator transition (MIT) temperatures is investigated. The N‐doped VO2 thin films are grown on an SnO2 buffer layer. The N‐doped VO2 lattice spacing...

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Bibliographic Details
Main Authors: Taisei Kano, Hiroyuki Nishinaka, Yuta Arata, Masahiro Yoshimoto
Format: Article
Language:English
Published: Wiley-VCH 2024-12-01
Series:Advanced Materials Interfaces
Subjects:
metal–insulator transition
Mist chemical vapor deposition (CVD)
N‐doped
synthetic mica
VO2
Online Access:https://doi.org/10.1002/admi.202400038
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https://doi.org/10.1002/admi.202400038

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