Application Status of SiC Power Device and Its Development Tendency by QI Yu, LI Yanyong, HU Jiaxi, FAN Wei, TANG Wei

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Micro-nanoscale laser subsurface vertical modification of 4H-SiC semiconductor materials: mechanisms, processes, and challenges by Hongmei Li, Hongwei Wang, Yuxin Li, Xiwen Lu, Lin Li, Yinzhou Yan, Wei Guo

“…Abstract Wide-bandgap semiconductor materials, exemplified by silicon carbide (SiC), have emerged as pivotal materials in semiconductor devices due to their exceptional chemical stability, high electron mobility, and thermal stability. …”
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Dynamic control of X-ray core-exciton resonances by Coulomb screening in photoexcited semiconductors by Thomas C. Rossi, Lu Qiao, Conner P. Dykstra, Ronaldo Rodrigues Pela, Richard Gnewkow, Rachel F. Wallick, John H. Burke, Erin Nicholas, Anne Marie March, Gilles Doumy, D. Bruce Buchholz, Christiane Deparis, Jesús Zúñiga-Pérez, Michael Weise, Klaus Ellmer, Mattis Fondell, Claudia Draxl, Renske M. van der Veen

“…Applied to the prototypical wide-bandgap semiconductor ZnO, first-principles calculations reproduce experimental results and unveil how the density and distribution of photoexcited carriers dynamically tune Coulomb screening, thereby controlling core-exciton binding energies, while Pauli blocking remains negligible. …”
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Recent advances in ZnO based photocatalysts for industrial dye degradation by Andriambahiny Ranto Ny Aina, Harry Patel, Subhajit Aich, Biplab Roy, Niladri Shekhar Samanta, Biswadeep Pal

“…Photocatalytic techniques with chemical approaches, nanotechnology, and semi-conductors are considered as sustainable and cost-effective methods. ZnO, a wide-bandgap semiconductor, has garnered considerable interest owing to its elevated photocatalytic efficacy, affordability, low toxicity, and ecological compatibility. …”
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Strain-induced bandgap engineering in 2D ψ-graphene materials: a first-principles study by Kamal Kumar, Nora H. de Leeuw, Jost Adam, Abhishek Kumar Mishra

“…Like ψ-graphene, ψ-graphone has a zero bandgap, but ψ-graphane is a wide-bandgap semiconductor. In this study, we have applied in-plane and out-of-plane biaxial strain on pristine and hydrogenated ψ-graphene. …”
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