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241
High‐Efficiency Flexible GaAs/InGaAs Dual‐Junction Solar Cells Fabricated by Metallic Nanoparticle‐Based Wafer Bonding
Published 2025-02-01“…Multijunction solar cells made from highly lattice‐mismatched (LMM) material systems offer an optimal bandgap combination for the ultrahigh conversion of solar energy to electricity. …”
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242
Design and numerical simulation of CuBi2O4 solar cells with graphene quantum dots as hole transport layer under ideal and non-ideal conditions
Published 2025-01-01“…The effect of various cell parameters such as the thickness of the absorber layer, HTL layer, and FTO, acceptor and defect density, the bandgap of the absorber and HTL layer, series and shunt resistance, back and front contact materials, radiation and Auger recombination of the absorber layer, reflection losses on the efficiency of the proposed cell is analysed. …”
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243
Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors
Published 2025-01-01“…Design considerations for OALVs incorporating UWBG photoconductors are discussed, and the photoresponsivity from defect‐mediated sub‐bandgap absorption in AlN crystals is verified as sufficient for OALVs operating under high light fluences. …”
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244
Synthesis and characterization of indium-doped ZnO nanoparticles by coprecipitation method for highly photo-responsive UV light sensors
Published 2024-01-01“…Defects in the crystal lattice, such as oxygen vacancies or interstitial defects, can create energy levels within the bandgap. Subsequently, we evaluated the suitability of these Indium-doped ZnO nanostructures for light sensor applications. …”
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245
Optical band gap modulation in functionalized chitosan biopolymer hybrids using absorption and derivative spectrum fitting methods: A spectroscopic analysis
Published 2025-01-01“…Tauc and ASF model was also used to calculate the electronic transitions, band structure, and optical characteristics. Bandgap energy based on Tauc model at m = 2, 1/3, 1/2, and 2/3 are 1.77, 1.54, 1.47, and 1.37 eV, based on ASF model are 1.52, 1.42, 1.69, and 1.47 eV, respectively. …”
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246
Surface crystal-orientation-dependent second-order nonlinear optical properties of cubic boron arsenide (c-BAs)
Published 2025-01-01“…The energy band structure demonstrates that c-BAs is an indirect bandgap semiconductor. The isotropic complex dielectric functions and the derived linear optical parameters have been obtained, such as complex refractive index and reflectivity. …”
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247
Universal Synthesis of Core–Shell‐Structured Ordered Mesoporous Transition Metal Dichalcogenides/Metal Oxides Heterostructures with Active Edge Sites
Published 2025-01-01“…Two‐dimensional (2D) transition metal dichalcogenides (TMDs) are widely used in interfacial reactions and electronic devices due to their tunable bandgap and high efficiency of carrier transport. …”
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248
Advancement of Pt and Pd-based catalysis for green, sustainable energy and bio-medical applications
Published 2025-01-01“…Pt and Pd co-catalysts in photocatalytic water splitting are examined for their contributions to clean hydrogen production, with a focus on bandgap adjustment, reduced recombination time, and enhanced charge carrier separation. …”
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249
Microstructural transformation of GO to rGO by ascorbate acid green-agent enhanced using sonication method
Published 2025-01-01“…The results showed that increasing the sonication duration decreased the particle size of rGO significantly, contributing to microstructural transformation. The decrease in the bandgap of rGO was also confirmed through UV–vis characterization. …”
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250
Tailoring Red-to-Blue Emission in In<sub>1−x</sub>Ga<sub>x</sub>P/ZnSe/ZnS Quantum Dots Using a Novel [In(btsa)<sub>2</sub>Cl]<sub>2</sub> Precursor and GaI<sub>3</sub>
Published 2024-12-01“…Ternary In<sub>1−x</sub>Ga<sub>x</sub>P quantum dots (QDs) have emerged as promising materials for efficient blue emission, owing to their tunable bandgap, high stability, and superior optoelectronic properties. …”
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251
Implementation and comprehensive investigation of gate engineered Si0.1Ge0.9/GaAs charged plasma based JLTFET for improved analog/ RF performance
Published 2025-03-01“…This study introduces the Variable Length Dual Dielectric Material-Gate Spacer Engineering Heterostructure Junction-Less Tunnel Field-Effect Transistor (VLDD-GSE-HJLTFET), a novel device that integrates advanced bandgap engineering, dual-dielectric gate configuration, and heterostructure design using Si0.1Ge0.9/GaAs layers. …”
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252
Revealing enhanced dilution effect of conjugated polymers in partially miscible blends
Published 2025-01-01“…Abstract Recent experiments have shown that hole traps could be suppressed in polymer light‐emitting diodes under current stress by diluting the light‐emitting conjugated polymers within an “inert” large‐bandgap host material. However, it is unclear why there is an enhanced dilution effect in partially miscible blends rather than fully miscible blends, as intuition would suggest that better miscibility leads to better dilution. …”
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253
Electrically chargeable inorganic persistent luminescence in an alternating current driven electroluminescent device
Published 2025-02-01“…The spin-coating method-prepared emission layer composites consist of a small bandgap copper-doped zinc sulfide core, a high dielectric constant alumina shell and a chemically passivated dielectric polydimethylsiloxane medium (ZnS:Cu@AlOx@PDMS), and these composites exhibit well-distributed electric fields and excellent operational stability. …”
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254
Giant Photoluminescence Enhancement of Ga‐Doped ZnO Microwires by X‐Ray Irradiation
Published 2025-01-01“…Abstract Ga‐doped zinc oxide (ZnO) microwires hold great promise for developing highly efficient light sources because of the wide bandgap with proper exciton binding energy. However, most microwires grown from one mainstream approach, i.e., chemical vapor deposition (CVD), are morphologically and crystallographically defective, exhibiting limited photoluminescence performances. …”
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255
Eco-Friendly Synthesis of Zirconium Dioxide Nanoparticles from <i>Toddalia asiatica</i>: Applications in Dye Degradation, Antioxidant and Antibacterial Activity
Published 2025-01-01“…UV–visible spectroscopy showed a characteristic band at 281 nm with a bandgap energy of 3.7 eV, indicating effective stabilization by the phytochemicals in <i>T</i>. …”
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256
Synthesis, characterization, and application of MnFe2O4/FeVO4/modified zeolite nanocomposite as an effective photocatalyst for methylene blue degradation and benzothiophene desulfu...
Published 2025-01-01“…Diffusion reflectance spectroscopy (DRS) analysis indicated bandgap values of 1.38 eV for MnFe2O4/FeVO4, 1.48 eV for the 1:1 ratio of MnFe2O4/FeVO4/modified zeolite, and 1.44 eV for the 2:1 ratio. …”
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257
Green synthesis and characterization of CuO/ZnO nanocomposite using Musa acuminata leaf extract for cytotoxic studies on colorectal cancer cells (HCC2998)
Published 2024-12-01“…CuO/ZnO NC was characterized via UV-Vis analysis with a peak detected at 365 nm with a bandgap energy of 3.43 eV. Field emission scanning electron microscopy analysis showed an agglomerated, irregular shape with a size ranging from 31.8 to 85.7 nm. …”
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258
Structural and electronic features enabling delocalized charge-carriers in CuSbSe 2
Published 2025-01-01“…Using a combination of theory and experiment, the critical enabling factors are found to be: 1) having a layered structure, which allows distortions to the unit cell during the propagation of an acoustic wave to be relaxed in the interlayer gaps, with minimal changes in bond length, thus limiting deformation potentials; 2) favourable quasi-bonding interactions across the interlayer gap giving rise to higher electronic dimensionality; 3) Born effective charges not being anomalously high, which, combined with the small bandgap ( $$\le$$ ≤ 1.2 eV), result in a low ionic contribution to the dielectric constant compared to the electronic contribution, thus reducing the strength of Fröhlich coupling. …”
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259
Dual-functional passivation on highly-efficient air-processed FAPbI₃ perovskite solar cells fabricated under high humidity without auxiliary equipment
Published 2025-01-01“…Formamidinium lead triiodide (FAPbI3) perovskite has garnered significant attention due to its narrow bandgap and excellent thermal stability. However, the photo-active α-phase FAPbI3 suffers the poor structural stability, easily transforming to photo-inactive δ-phase FAPbI3 at room temperature, a process that is accelerated by the moisture. …”
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260
Advantages of N-Type Hydrogenated Microcrystalline Silicon Oxide Films for Micromorph Silicon Solar Cells
Published 2013-01-01“…The n μc-SiO:H films with high optical bandgap and low refractive index could be obtained when a ratio of carbon dioxide (CO2) to silane (SiH4) flow rate was raised; however, a trade-off against electrical property was observed. …”
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