Features of the receiving of piezoelectric thin films by plasma spraying of powdery AlN by V. S. Feshchenko, K. N. Zyablyuk, E. A. Senokosov, V. I. Chukita, D. A. Kiselev

“…A wide range of semiconductor devices are produced from it, such as photodetectors, LEDs, piezoelectric converters, etc. But the widespread use of products based on AlN prevents low manufacturability designs based on it. …”
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Microscopic and Spectroscopic Investigation of (AlxGa1–X)2O3 Films: Unraveling the Impact of Growth Orientation and Aluminum Content by Jith Sarker, Prachi Garg, Abrar Rauf, Ahsiur Rahman Nirjhar, Hsien‐Lien Huang, Menglin Zhu, A. F. M. Anhar Uddin Bhuiyan, Lingyu Meng, Hongping Zhao, Jinwoo Hwang, Eric Osei‐Agyemang, Saquib Ahmed, Baishakhi Mazumder

“…Abstract (AlxGa1–x)2O3 is an ultrawide‐bandgap semiconductor with a high critical electric field for next‐generation high‐power transistors and deep‐ultraviolet photodetectors. While (010)‐(AlxGa1–x)2O3 films have been studied, the recent availability of (100), (2¯01)‐Ga2O3 substrates have developed interest in (100), (2¯01)‐(AlxGa1–x)2O3 films. …”
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Adhesion-induced MoS2 layer transfer via in-situ TEM-nanoindentation: Effects of curvature and substrate mediated residual stress by Jhih H. Liang, Mehdi Rouhani, J. David Schall, Takaaki Sato, Christopher Muratore, Nicholas R. Glavin, Robert W. Carpick, Yeau-Ren Jeng

“…Molybdenum disulfide (MoS2) holds great potential in a wide range of applications, including electronics, photodetectors, light-emitting diodes (LEDs), and solar cells due to its unique two-dimensional (2D) structure. …”
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Metrological studies of the characteristics of multilayer surface coatings using synchrotron radiation by A. S. Sigov, O. A. Minaeva, S. I. Anevsky, A. M. Lebedev, R. V. Minaev

“…To form multilayer nanostructures directly on the receiving surface of photodetectors, an ion-plasma sputtering module is used. …”
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