Ring Defects Associated with Boron–Oxygen‐Related Degradation in p‐Type Silicon Heterojunction Solar Cells by Bruno Vicari Stefani, Moonyong Kim, Matthew Wright, Anastasia Soeriyadi, Ilya Nyapshaev, Konstantin Emtsev, Brett Hallam

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Electrical and photoelectric properties of photocell based on two Schottky barrier contacts Al-p-Si and Ti-p-Si by A. I. Blesman, R. B. Burlakov, D. A. Polonyankin

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The Impact of Carbon on Electronic Structure of N-Doped ZnO Films: Scanning Photoelectron Microscopy Study and DFT Calculations by Elzbieta Guziewicz, Sushma Mishra, Matteo Amati, Luca Gregoratti, Oksana Volnianska

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Preparation of p-type Fe2O3 nanoarray and its performance as photocathode for photoelectrochemical water splitting by Xiaoli Fan, Fei Zhu, Zeyi Wang, Xi Wang, Yi Zou, Bin Gao, Li Song, Jianping He, Tao Wang

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Discovery of a Robust P‐Type Ultrawide Bandgap Oxide Semiconductor: LiGa5O8 by Kaitian Zhang, Vijay Gopal Thirupakuzi Vangipuram, Hsien‐Lien Huang, Jinwoo Hwang, Hongping Zhao

Subjects: “…LiGa5O8, p‐type…”
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Hall element with two Schottky barrier contacts Al-p-Si by R. B. Burlakov

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Photocell with two Schottky barrier contacts Ti-p-Si and ohmic silicide contact NiSi-p-Si by R. B. Burlakov

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Designs of Charge-Balanced Edge Termination Structures for 3.3 kV SiC Power Devices Using PN Multi-Epitaxial Layers by Sangyeob Kim, Ogyun Seok

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Photocell with two Schottky barrier contacts Al-p-Siand ohmic silicide contact by R. B. Burlakov

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