Showing 421 - 440 results of 759 for search '"optoelectronic"', query time: 0.04s Refine Results
  1. 421

    Crystal structure and Hirshfeld surface analysis of the layered hybrid metal halide poly[bis(2-iodoethylammonium) [di-μ-iodido-diiodidogermanate(II)]] by Olesia I. Kucheriv, Mircea-Odin Apostu, Olena Prysiazhna, Vadim A. Potaskalov, Sergey O. Malinkin

    Published 2025-01-01
    “…The title compound is a germanium-based hybrid metal halide that represents a less-toxic alternative to more popular lead-based analogues in optoelectronic applications. {(2-IC2H4NH3)2[GeI4]}n is composed of infinite inorganic layers that are formed by [GeI6]4− octahedra connected in a corner-sharing manner with four equatorial I atoms. …”
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  2. 422
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  4. 424

    Fluorescence Properties of Novel Multiresonant Indolocarbazole Derivatives for Deep-Blue OLEDs from Multiscale Computer Modelling by Nikita O. Dubinets, Andrey Yu. Sosorev

    Published 2025-01-01
    “…On the contrary, the addition of phenyls to another positions of the core is detrimental for optoelectronic properties. QM/MM and QM/EFP calculations yielded negligible inhomogeneous broadening of the emission spectrum of the studied luminophores when embedded as dopants in anthracene-based hosts, predicting high colour purity of the corresponding devices. …”
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  5. 425

    Normalization of Retinal Birefringence Scanning Signals by Boris I. Gramatikov, David L. Guyton

    Published 2024-12-01
    “…After discussing the pros and cons of employing a normalization signal obtained by means of added optoelectronic hardware, the study shifts over and focuses on a numerical normalization method based on merely the <i>s</i>- and <i>p</i>-polarization components without additional optical or electronic hardware. …”
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  6. 426
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    Optical and Electrical Properties of TiO2/Co/TiO2 Multilayer Films Grown by DC Magnetron Sputtering by Marcos G. Valluzzi, Lucas G. Valluzzi, Marcos Meyer, María A. Hernández-Fenollosa, Laura C. Damonte

    Published 2018-01-01
    “…The optical and electrical properties of these films were analyzed with the aim of substituting ITO substrate in optoelectronic devices. The samples were characterized by UV-visible spectroscopy, atomic force microscopy (AFM), and Kelvin probe force microscopy (KPFM). …”
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  9. 429

    Electronic Structure and Optical Properties of GaAs Doped with Rare-Earth Elements (Sc, Y, La, Ce, and Pr) by Yongrong Deng, Chunhong Zhang, Xinmao Qin, Wanjun Yan

    Published 2025-01-01
    “…Such doping may provide a new class of materials for use in optoelectronic devices.…”
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  10. 430

    Raman scattering owing to magneto-polaron states in monolayer transition metal dichalcogenides by C. Trallero-Giner, D. G. Santiago-Pérez, D. V. Tkachenko, G. E. Marques, V. M. Fomin

    Published 2024-06-01
    “…The results obtained are a guideline for controlling MP effects on the magneto-optical properties of TMD semiconductors, which open pathways to novel optoelectronic devices based on 2D TMDs.…”
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  11. 431

    Effect of In Situ Thermal Annealing on Structural, Optical, and Electrical Properties of CdS/CdTe Thin Film Solar Cells Fabricated by Pulsed Laser Deposition by Alaa Ayad Al-mebir, Paul Harrison, Ali Kadhim, Guanggen Zeng, Judy Wu

    Published 2016-01-01
    “…Atomic force microscopy and Raman spectroscopy show that the iTAP in the optimal processing window produces considerable CdTe grain growth and improves the CdTe crystallinity, which results in significantly improved optoelectronic properties and quantum efficiency of the CdS/CdTe solar cells. …”
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  14. 434

    Recent Advances in Graphene-Assisted Nonlinear Optical Signal Processing by Jian Wang, Xiao Hu

    Published 2016-01-01
    “…Possessing a variety of remarkable optical, electronic, and mechanical properties, graphene has emerged as an attractive material for a myriad of optoelectronic applications. The wonderful optical properties of graphene afford multiple functions of graphene based polarizers, modulators, transistors, and photodetectors. …”
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    Effect of growth temperature on the physical properties of kesterite Cu2ZnSnS4 (CZTS) thin films by Fatima Zohra Boutebakh, N. Attaf, M. S. Aida

    Published 2025-01-01
    “…The effect of substrate temperature (Tsub), ranging from 300°C to 390°C on their structure and optoelectronic properties. The structural properties reveal that all the prepared CZTS films have a kesterite structure, with a preferential orientation along (112) plane, and presence of secondary phases. …”
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  17. 437

    Advancements and Challenges of Vacuum‐Processed Organic Photodiodes: A Comprehensive Review by Chan So, Won Jun Pyo, Dae Sung Chung

    Published 2025-02-01
    “…Organic photodiodes (OPDs) have made remarkable strides and now poised to surpass traditional silicon photodiodes (PDs) in various aspects including linear dynamic range (LDR), detectivity, wavelength selectivity, and versatility.[1] Tunable mechanical and optoelectronic properties of organic semiconductors, coupled with lower process costs, have propelled OPDs into the spotlight across fields such as wearable light fidelity systems, flexible image sensors, and biomedical imaging.[2–5] While most advanced organic imaging systems to date rely on polymer‐based solution processes, challenges such as the use of toxic organic solvents and reproducibility issues hinder their commercialization.[6,7] Vacuum‐processed OPDs offer a promising alternative, boasting eco‐friendliness and compatibility with large‐scale fabrication facilities.[8,9] In this review, recent advancements and challenges in vacuum‐processed OPDs, an area that has received less attention compared to solution‐processed counterparts, are explored. …”
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  18. 438

    Terahertz generation from surface of the bulk and monolayer tungsten diselenide by D. I. Khusyainov, A. V. Gorbatova, A. M. Buryakov

    Published 2020-12-01
    “…It is connected with potential use of these materials in flexible optoelectronic devices of visible and THz range. In this paper the parameters of generation of terahertz field from the surface of bulk layered crystal and monolayer film of tungsten diselenide are analyzed. …”
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  19. 439

    Epitaxial growth of transition metal nitrides by reactive sputtering by Florian Hörich, Christopher Lüttich, Jona Grümbel, Jürgen Bläsing, Martin Feneberg, Armin Dadgar, Rüdiger Goldhahn, André Strittmatter

    Published 2025-01-01
    “…Implementing transition metal nitride (TM-nitride) layers by epitaxy into group-III nitride semiconductor layer structures may solve substantial persisting problems for electronic and optoelectronic device configurations and subsequently enable new device classes in the favorable nitride semiconductor family. …”
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