A comprehensive review of yttrium aluminum nitride: crystal structure, growth techniques, properties, and applications by N. Afshar, M. Yassine, O. Ambacher

“…YAlN has emerged as a wide band gap semiconductor with high potential to compete with ScAlN in industrial applications. …”
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Oxytetracycline photodegradation by transition metals doped ZnO nanorods by Siavash Fathi, Bagher Aslibeiki, Reza Torkamani

“…The results show that photocatalytic activity of the samples highly depends on morphology, size and band gap energy. The UV–Vis spectroscopy indicate that Fe doping has reduced the band gap energy to 2.91 eV. …”
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Analysis of the defect mode features in an asymmetric and symmetric acoustic system using expansion chambers by Ilyas Antraoui, Ali Khettabi, Mohammed Sallah, Zaky A. Zaky

“…Concerning the defected asymmetrical configuration, there is a consistent peak located inside acoustic band gap. On the other hand, in the symmetrical structure, two consistent peaks appear in the band gap. …”
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Sensitization of Perovskite Strontium Stannate SrSnO3 towards Visible-Light Absorption by Doping by Hungru Chen, Naoto Umezawa

“…Perovskite strontium stannate SrSnO3 is a promising photocatalyst. However, its band gap is too large for efficient solar energy conversion. …”
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Numerical Analysis of Copper-Indium-Gallium-Diselenide-Based Solar Cells by SCAPS-1D by S. Ouédraogo, F. Zougmoré, J. M. Ndjaka

“…Increasing hole density (p) or absorber band gap (Eg) improves Voc and leads to high efficiency, which equals value of 16.1% when p = 1016 cm−3 and Eg=1.2 eV. …”
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Valence Band Structure of InAs1-xBix and InSb1-xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model by D. P. Samajdar, S. Dhar

“…The calculated values of band gap variation agree well with the available experimental data.…”
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Diverse Role of Silicon Carbide in the Domain of Nanomaterials by T. Sahu, B. Ghosh, S. K. Pradhan, T. Ganguly

“…Silicon carbide (SiC) is a promising material due to its unique property to adopt different crystalline polytypes which monitor the band gap and the electronic and optical properties. …”
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Nitrogen-carbon nanotubes as a basis for a new type of semiconductor materials for electronics devices by Irina V. Zaporotskova, Sergey V. Boroznin, Natalia P. Boroznina, Evgeniy S. Dryuchkov, Kseniya Yu. Verevkina, Yulia V Butenko, Pavel A. Zaporotskov, Lev V. Kozhitov, Alena V. Popkova, Aleksandr D. Grigoriev

“…A relationship has been drawn between the band gap, conductivity and optical properties of the materials. …”
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Synthetic Strategies and Applications of GaN Nanowires by Guoquan Suo, Shuai Jiang, Juntao Zhang, Jianye Li, Meng He

“…GaN is an important III-V semiconductor material with a direct band gap of 3.4 eV at 300 K. The wide direct band gap makes GaN an attractive material for various applications. …”
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Studies on the Optical Properties and Surface Morphology of Cobalt Phthalocyanine Thin Films by Benny Joseph, C. S. Menon

“…The present studies reveal that the optical band gap energies of CoPc thin films are almost same on substrate temperature variation. …”
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DFT and TD-DFT Study of Structure and Properties of Semiconductive Hybrid Networks Formed by Bismuth Halides and Different Polycyclic Aromatic Ligands by Y. Belhocine, M. Bencharif

“…However, significant differences were obtained for the band gap values with relativistic effects of the zero order regular approximation scalar corrections (ZORA) and LB94 functional seems to reproduce better the experimental optical band gap of these systems.…”
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Thickness Dependent on Photocatalytic Activity of Hematite Thin Films by Yen-Hua Chen, Kuo-Jui Tu

“…Hematite films possess a polycrystalline hexagonal structure, and the band gap decreases with an increase of film thickness. …”
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Magnetic Properties of Fe and Ni Doped SnO2 Nanoparticles by Ravi Kumar, K.D.Verma, Shalendra Kumar, Mayora Varshney, Aditya Sharma

“…TEM results depict the formation of spherically shaped and small sized nanoparticles of the diameter of ~ 3 nm. The band gap energy of the Fe and Ni doped samples found to decrease with increasing their concentrations. …”
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Influence of Sulfurization Temperature on Photoelectric Properties Cu2SnS3 Thin Films Deposited by Magnetron Sputtering by Pengyi Zhao, Shuying Cheng

“…Cu2SnS3 is a narrow-band-gap semiconductor material. It has suitable optical and electrical properties which make it a potential absorber layer of solar cells. …”
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Tuning Electronic Structure and Optical Properties of Monolayered h-BN by Doping C, Cu and Al by Qun Li, Tengchao Gao, Kuo Zhang, Xiangming Che, Guolong Ni

“…The results show that the C ortho-doped h-BN (BCN) structure with a band gap of 3.05 eV is relatively stable, which is selected as a substate to achieve the Cu-Al co-doped h-BN. …”
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The properties of fluorine-doped graphene-based intermediate band solar cell materials by Lingyun Sun

“…The reason for this phenomenon should be that the polarity of C-F bonds is much larger than that between C-C bonds, and the doping of fluorine atoms causes the charge transfer between atoms, resulting in the opening of the graphene band gap and the introduction of the intermediate band.…”
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TiO2/ZnS/CdS Nanocomposite for Hydrogen Evolution and Orange II Dye Degradation by Václav Štengl, Daniela Králová

“…Doped titanium dioxide by the CdS increased band-gap energy and doping with ZnS increased photocatalytic activity. …”
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Influence of Air Annealing and Gamma Ray Irradiation on the Optical Properties of Cl16FePc Thin Films by Raji Koshy, C. S. Menon

“…Optical transition is found to be of direct type and optical band gaps are determined by analyzing the absorption spectrum. …”
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Neodymium-doped SnS nanomaterials: ultrasound-assisted synthesis, characterization, and investigation of its physical properties by Mostafa Yousefi, Younes Hanifehpour, Mehdi Abdolmaleki, Negin Rahmani

“…After examining the surface morphology and structure of the synthesized samples, diffuse reflectance spectroscopy (DRS) and 4-probe techniques were employed to study the optical properties and electrical conductivity of these compounds. Band gap calculations based on absorption spectrum data indicated that the band gap decreased with the increase in dopant amount. …”
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Electrical Response of CdS Thin Film and CdS/Si Heterojunction to Gamma Radiation by M. R. Balboul, A. Abdel-Galil, I. S. Yahia, A. Sharaf

“…The γ-irradiation was found to increase the concentration of the deep traps within the band gap of the CdS/Si heterojunction.…”
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