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Spin-momentum locking as a source of spin-splitting anisotropy in inverted HgTe quantum wells
Published 2025-01-01Subjects: Get full text
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Physical properties of nanostructured ZnO thin films deposited by DC magnetron sputtering method with different volume of O2 in carrier gas
Published 2019-01-01Subjects: Get full text
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43
Numerical Investigation of Ultra-Wide Low-Frequency Wave Attenuation Using Seismic Metamaterials with Auxetic Slender Strips
Published 2024-12-01Subjects: “…ultra-wide low-frequency band gap…”
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A mm-Wave 5G Double Slot Array Antenna Based on Gap Waveguide Technology and Glide Symmetries
Published 2025-01-01Subjects: Get full text
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45
Preparation and Study Annealing Effect on Structure and Optical Properties of ZnIn2(Se0.8Te0.2)4 Thin Film
Published 2025-01-01Subjects: Get full text
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46
First Principles Study of Electronic and Optical Properties of Cadmium-Tin-Oxide
Published 2025-01-01Subjects: Get full text
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47
Novel properties of vacancy-ordered perovskite-Cs2BCl6 induced by d-orbital electrons
Published 2025-03-01“…Hf4+ and W4+ with high-energy d-state external electron configurations can further lower the valence band maximum position of the Cs2BCl6 structures and thus increase the band gap, assisting in tuning the optical absorption and emission properties of these structures in the optoelectronic application. …”
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ITO-Free Semitransparent Organic Solar Cells Based on Silver Thin Film Electrodes
Published 2014-01-01Get full text
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49
The Chalcogen (S, Se, and Te) Doping Effects on the Structural and Electronic Properties of Anatase (101) TiO2 Thin Surface Layers: DFT Study
Published 2024-01-01“…Doping TiO2 with chalcogen (S, Se, and Te) decreases its band gap and enhances the photocatalytic activity. …”
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50
Ultra‐Broad Emission Copper Halide Scintillator‐Based X‐Ray Imager
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51
H2O2 Treatment of Electrochemically Deposited Cu2O Thin Films for Enhancing Optical Absorption
Published 2013-01-01“…CuO has a smaller band gap of about 1.35 eV. Therefore, we attempted to oxidize Cu2O using H2O2 to increase oxygen ratio and decrease band gap. …”
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Conformational Analysis (Semi Empirical PM3) and Electronic Properties of Functionalized Oligo(hexylpyrroles)
Published 2007-01-01“…A semi empirical analysis of functionalized 3-hexylpyrroles [3XHP, where X= Br, NH2, SH, CN, COOH, CONC(CH3)2 and N(CH3)2] having functional group attached to the hexyl substituent up to four monomeric units in head-tail-head-tail regioselectivity was carried out. The energy band gap obtained at PM3 level showed that oligomers with 3BHP present lowest energy band gap. …”
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54
Preferential Crystallographic Orientation and Optical Properties in (Ag,Zn)-Based Oxide Nanoparticle Thin Film Depending on Spark Voltage
Published 2024-01-01“…The optical band gap narrowed (redshifted) due to the effect of Ag ions entering the ZnO structure. …”
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55
Morphological, Structural, and Optical Properties of Single-Phase Cu(In,Ga)Se2 Thin Films from the Selenization of Thermally Evaporated InSe/Cu/GaSe Precursors
Published 2014-01-01“…The relatively small band gap values (~1 eV) of CuInSe2 thin films limit the conversion efficiencies of completed CuInSe2/CdS/ZnO solar cell devices. …”
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56
Simulation of film bulk acoustic resonator based on two-dimensional phononic crystals
Published 2022-03-01“…A new structure of film bulk acoustic resonator (FBAR) based on phononic crystal (PnC) was proposed.The phononic crystal was used as the acoustic reflection layer at the bottom of the bulk acoustic wave resonator, which has the characteristics of high reflectivity and low transmittance of elastic wave in its band gap.The band gap characteristics of four kinds of phononic crystals with different structures were calculated by the finite element software COMSOL Multiphysics.The main conclusions are as follows.If the bulk acoustic resonator is working within the band gap of the phononic crystal, PnC can be used as the bottom acoustic reflection layer of the FBAR.With using PnC as the acoustic energy reflect structure, the impedance curve of FBAR is smooth, and the quality factor is closed to traditional FBAR with a value of 859 and effective mechanical coupling coefficient of 6.32%.…”
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Influence of Secondary Phases in Kesterite-Cu2ZnSnS4 Absorber Material Based on the First Principles Calculation
Published 2015-01-01“…The CTS/CZTS heterointerface is of type I; that is, the band gap of CTS is located within the band gap of CZTS. …”
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Surface Photovoltage Spectroscopy and AFM Analysis of CIGSe Thin Film Solar Cells
Published 2015-01-01“…The band gap, grain size, and topography of a Cu(In,Ga)Se2 (CIGSe) thin film solar cell are analyzed using surface photovoltage spectroscopy (SPV) and atomic force microscopy (AFM) techniques. …”
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Studies on the Optical Properties and Surface Morphology of Nickel Phthalocyanine Thin Films
Published 2007-01-01“…The band gap increases again at 458K with full of fiber like grains. …”
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