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    Enhancing Resistive Switching in AlN-Based Memristors Through Oxidative Al<sub>2</sub>O<sub>3</sub> Layer Formation: A Study on Preparation Techniques and Performance Impact

    Enhancing Resistive Switching in AlN-Based Memristors Through Oxidative Al<sub>2</sub>O<sub>3</sub> Layer Formation: A Study on Preparation Techniques and Performance Impact by Hongxuan Guo, Jiahao Yao, Siyuan Chen, Chong Qian, Xiangyu Pan, Kuibo Yin, Hao Zhu, Xu Gao, Suidong Wang, Litao Sun

    Published 2024-12-01
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