Ferroelectric capacitive memories: devices, arrays, and applications by Zuopu Zhou, Leming Jiao, Zijie Zheng, Yue Chen, Kaizhen Han, Yuye Kang, Dong Zhang, Xiaolin Wang, Qiwen Kong, Chen Sun, Jiawei Xie, Xiao Gong

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A ZnTe Thin Film Memory Device by Marc Burgelman

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Synthesis of Gold Nanoparticles Capped with Quaterthiophene for Transistor and Resistor Memory Devices by Mai Ha Hoang, Toan Thanh Dao, Nguyen Thi Thu Trang, Phuong Hoai Nam Nguyen, Trinh Tung Ngo

“…Recently, the fabrication of nonvolatile memory devices based on gold nanoparticles has been intensively investigated. …”
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PSEUDO-EXHAUSTIVE MEMORY DEVICES TESTING BASED ON MULTIPLE MARCH TESTS 1 by V. N. Yarmolik, I. Mrozek, B. A. Levantsevich

“…Methods for modern memory devices are analyzed. The validity of using pseudo-exhaustive tests to detect complex memory faults is shown. …”
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Channel Mobility and Inversion Carrier Density in MFIS FEFET: Deep Insights Into Device Physics for Non-Volatile Memory Applications by Song-Hyeon Kuk, Kyul Ko, Bong Ho Kim, Joon Pyo Kim, Jae-Hoon Han, Sang-Hyeon Kim

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Analysis and Synthesis March Memory Tests by V. N. Yarmolik, V. A. Levantsevich, D. V. Demenkovets

“…Mathematical models of memory device faults and the efficiency of their detection, in particular, complex pattern sensitive faults of the PNPSFk type, based on classical march memory tests are presented. …”
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Multiferroic Memories by Amritendu Roy, Rajeev Gupta, Ashish Garg

“…This phenomenon has led to the development of various kinds of materials and conceptions of many novel applications such as development of a memory device utilizing the multifunctionality of the multiferroic materials leading to a multistate memory device with electrical writing and nondestructive magnetic reading operations. …”
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Low interface state density and large capacitive memory window using RF sputtered NiO nanoparticles decorated MgZnO thin film by Mritunjay Kumar, Jay Chandra Dhar

“…The MgZnO thin film/NiO NPs memory device when measured for the C-V hysteresis characteristics at varying sweep voltage demonstrated a charge trapping and de-trapping mechanism. …”
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Optimal Design of FPGA Switch Matrix with Ion Mobility Based Nonvolatile ReRAM by Peng Hai-yun, Zhou Wen-gang

“…The resistive random access memory (ReRAM) is a metal oxide which is based on nonvolatile memory device possessing the characteristics of high read/write speed, high storage density, low power, low cost, very small cell, being nonvolatile, and unlimited writing endurance. …”
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Fotografias, narrativas e memórias sobre o lugar, a paisagem e o uso do solo na área de proteção ambiental Rota do Sol, Rio Grande do Sul by Gabriela Vitória de Oliveira, Aline Reis Calvo Hernandez, Patrícia Binkowski

“…To support the discussions we start with the theoretical-epistemological study of the use of photography as a research tool and memory device, as well as exploring the concept of landscape. …”
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A Fabrication Method for Memristors with Graphene Top Electrodes and their Characterization by Selin Onay, Ömer Refet Çaylan, Zarife Göknur Büke, Itır Köymen

“… In recent years, there has been extensive research on the memristor, a non-volatile memory device that demonstrates effective emulation of biological synapses. …”
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Highly Parallel Regular Expression Matching Using a Real Processing-in-Memory System by Jeonghyeon Joo, Hyojune Kim, Hyuck Han, Eul Gyu Im, Sooyong Kang

“…Processing-in-Memory (PIM) is an emerging computing paradigm exploiting a cutting-edge memory device (PIM device) that integrates hundreds to thousands of processing units with the memory modules. …”
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MESO-CMOS Hybrid Circuits With Time-Multiplexing Technique for Energy and Area-Efficient Computing in Memory by Tzuping Huang, Linran Zhao, Yiming Han, Hai Li, Ian A. Young, Yaoyao Jia

“…MESO provides dual functionality: each device can perform logic operations while acting as a nonvolatile memory device. MESO also offers advantages, such as an ultralow supply voltage of 100 mV and the potential to vertically integrate with CMOS, which promises significant energy and area efficiency. …”
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Room temperature ferroelectricity in monolayer graphene sandwiched between hexagonal boron nitride by Fanrong Lin, Xiaoyu Xuan, Zhonghan Cao, Zhuhua Zhang, Ying Liu, Minmin Xue, Yang Hang, Xin Liu, Yizhou Zhao, Libo Gao, Wanlin Guo, Yanpeng Liu

“…Abstract The ferroelectricity in stacked van der Waals multilayers through interlayer sliding holds great promise for ultrathin high-density memory devices, yet mostly subject to weak polarization and cryogenic operating condition. …”
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Multifunctional 2D FETs exploiting incipient ferroelectricity in freestanding SrTiO3 nanomembranes at sub-ambient temperatures by Dipanjan Sen, Harikrishnan Ravichandran, Mayukh Das, Pranavram Venkatram, Sooho Choo, Shivasheesh Varshney, Zhiyu Zhang, Yongwen Sun, Jay Shah, Shiva Subbulakshmi Radhakrishnan, Akash Saha, Sankalpa Hazra, Chen Chen, Joan M. Redwing, K. Andre Mkhoyan, Venkatraman Gopalan, Yang Yang, Bharat Jalan, Saptarshi Das

“…Abstract Incipient ferroelectricity bridges traditional dielectrics and true ferroelectrics, enabling advanced electronic and memory devices. Firstly, we report incipient ferroelectricity in freestanding SrTiO3 nanomembranes integrated with monolayer MoS2 to create multifunctional devices, demonstrating stable ferroelectric order at low temperatures for cryogenic memory devices. …”
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Polar vortex hidden in twisted bilayers of paraelectric SrTiO3 by Haozhi Sha, Yixuan Zhang, Yunpeng Ma, Wei Li, Wenfeng Yang, Jizhe Cui, Qian Li, Houbing Huang, Rong Yu

“…Abstract Polar topologies, such as vortex and skyrmion, have attracted significant interest due to their unique physical properties and promising applications in high-density memory devices. To date, all known polar vortices are present in or induced by ferroelectric materials. …”
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Local manipulation of skyrmion lattice in Fe3GaTe2 at room temperature by Shuaizhao Jin, Zhan Wang, Shouzhe Dong, Yiting Wang, Kun Han, Guangcheng Wang, Zunyi Deng, Xingan Jiang, Ying Zhang, Houbing Huang, Jiawang Hong, Xiaolei Wang, Tianlong Xia, Sang-Wook Cheong, Xueyun Wang

“…Our results suggest Fe3GaTe2 emerges as a highly promising contender for the realization of skyrmion-based layered spintronic memory devices.…”
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Fractional-Order Memristor Emulator Circuits by C. Sánchez-López, V. H. Carbajal-Gómez, M. A. Carrasco-Aguilar, I. Carro-Pérez

“…Moreover, the FOM emulator circuits can be used for improving future applications such as cellular neural networks, modulators, sensors, chaotic systems, relaxation oscillators, nonvolatile memory devices, and programmable analog circuits.…”
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Pseudoexhaustive memory testing based on March A type march tests by V. N. Yarmolik, I. Mrozek, S. V. Yarmolik

“…The relevance of testing of memory devices of modern computing systems is shown. The methods and algorithms for implementing test procedures based on classical March tests are analyzed. …”
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Rapid learning with phase-change memory-based in-memory computing through learning-to-learn by Thomas Ortner, Horst Petschenig, Athanasios Vasilopoulos, Roland Renner, Špela Brglez, Thomas Limbacher, Enrique Piñero, Alejandro Linares-Barranco, Angeliki Pantazi, Robert Legenstein

“…In this work, we pair L2L with in-memory computing NMHW based on phase-change memory devices to build efficient AI models that can rapidly adapt to new tasks. …”
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