Showing 21 - 25 results of 25 for search '"Memory device"', query time: 0.03s Refine Results
  1. 21

    Mutual control of electric and magnetic orders near room temperature in Al doped Y-type hexaferrite single crystals by Pengzheng Li, Mengfang Yu, Lin Yang, Qiutian Duan, Yinchen Wu, Aihua Zhang, Min Zeng, Meifeng Liu, Xingsen Gao

    Published 2025-03-01
    “…Realizing robust magnetoelectric (ME) coupling effect near room temperature is still a long-standing challenge for the application of multiferroic materials in next-generation low-power spintronic and memory devices. Here we report a systematic study on the magnetic, dielectric, and ME coupling properties of Y-type hexaferrite Ba0.5Sr1.5Co2Fe12–xAlxO22 (x = 0.0, 0.5, 1.0) single crystals. …”
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  2. 22

    Substrate Temperature-Dependent Structural, Optical, and Electrical Properties of Thermochromic VO2(M) Nanostructured Films Grown by a One-Step Pulsed Laser Deposition Process on S... by Ali Hendaoui

    Published 2021-01-01
    “…The present contribution provides a one-step process to control the morphology of VO2(M) films grown on smooth quartz substrates for applications as switches, memory devices, and smart windows.…”
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  3. 23

    SACNN‐IDS: A self‐attention convolutional neural network for intrusion detection in industrial internet of things by Mimonah Al Qathrady, Safi Ullah, Mohammed S. Alshehri, Jawad Ahmad, Sultan Almakdi, Samar M. Alqhtani, Muazzam A. Khan, Baraq Ghaleb

    Published 2024-12-01
    “…For instance, the existing DL approaches necessitate a substantial quantity of data for effective performance, which is not feasible to run on low‐power and low‐memory devices. Imbalanced and fewer data potentially lead to low performance on existing IDS. …”
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  4. 24

    Utilizing MRAMs With Low Resistance and Limited Dynamic Range for Efficient MAC Accelerator by Sateesh, Kaustubh Chakarwar, Shubham Sahay

    Published 2024-01-01
    “…Spintronics based magnetic memory devices can emulate synaptic behavior efficiently and are hailed as one of the most promising candidates for realizing compact and ultra-energy efficient neural network accelerators. …”
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  5. 25

    Controlled Fabrication of Native Ultra‐Thin Amorphous Gallium Oxide From 2D Gallium Sulfide for Emerging Electronic Applications by AbdulAziz AlMutairi, Aferdita Xhameni, Xuyun Guo, Irina Chircă, Valeria Nicolosi, Stephan Hofmann, Antonio Lombardo

    Published 2025-01-01
    “…These results show the significant potential of the oxidation‐based GaSxOy/GaS heterostructure for electronic applications and, in particular, low‐power memory devices.…”
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