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    Development of the 4 500 V IGBT Device with Low On-state Loss and Wide Safe Operation Area

    Development of the 4 500 V IGBT Device with Low On-state Loss and Wide Safe Operation Area by ZHANG Dahua, MA Liang, ZHANG Zhonghua, TAN Canjian, LIU Guoyou

    Published 2017-01-01
    Subjects: “…“U” shape DMOS+…”
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