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    Physicochemical conditions for the stability of manganese-doped nanolayers of gallium arsenide and its iso-electronic analogues

    Physicochemical conditions for the stability of manganese-doped nanolayers of gallium arsenide and its iso-electronic analogues by Yu. V. Terenteva, L. V. Fomina, S. A. Beznosyuk

    Published 2015-03-01
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  2. 2
    Physicochemical conditions of GaAs/GaAsxNy/GaN nanochips stability

    Physicochemical conditions of GaAs/GaAsxNy/GaN nanochips stability by N. V. Komarovskih, L. V. Fomina, S. A. Beznosyuk

    Published 2015-03-01
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