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    EFFECT OF MORPHOLOGY ON ELECTRONIC PROPERTIES OF THE <111> -ORIENTED GaAs, GaP, GaSb, InAs, InP AND InSb NANOWIRES

    EFFECT OF MORPHOLOGY ON ELECTRONIC PROPERTIES OF THE <111> -ORIENTED GaAs, GaP, GaSb, InAs, InP AND InSb NANOWIRES by D. A. Yatsyna, D. B. Migas, Y. S. Arsitov, A. B. Filonov, B. S. Kolosnitsyn

    Published 2019-06-01
    Subjects: “…а<sup>iii</sup>-b<sup>v</sup> наношнуры…”
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