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    Multi-Bit Resistive Random-Access Memory Based on Two-Dimensional MoO<sub>3</sub> Layers

    Multi-Bit Resistive Random-Access Memory Based on Two-Dimensional MoO<sub>3</sub> Layers by Kai Liu, Wengui Jiang, Liang Zhou, Yinkang Zhou, Minghui Hu, Yuchen Geng, Yiyuan Zhang, Yi Qiao, Rongming Wang, Yinghui Sun

    Published 2025-07-01
    Subjects: “…<i>α</i>-MoO<sub>3</sub> nanosheet…”
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