A bright future for micro-LED displays
Abstract The development of GaN-based Micro-LED arrays achieving brightnesses exceeding 107 nits and high-density micro-displays with up to 1080×780 pixels marks a true breakthrough in the field. This breakthrough is a result of mastering a combination of long-standing challenges comprising wafer-sc...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Publishing Group
2024-12-01
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| Series: | Light: Science & Applications |
| Online Access: | https://doi.org/10.1038/s41377-024-01683-z |
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| Summary: | Abstract The development of GaN-based Micro-LED arrays achieving brightnesses exceeding 107 nits and high-density micro-displays with up to 1080×780 pixels marks a true breakthrough in the field. This breakthrough is a result of mastering a combination of long-standing challenges comprising wafer-scale high-quality epitaxial growth, sidewall passivation, efficient photon extraction, and elegant bonding technologies, and promises significant advantages for augmented and virtual reality devices, wearables, and next-generation consumer electronics. |
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| ISSN: | 2047-7538 |