1-nm-thick epitaxial AlN passivation for highly efficient flexible InGaN red micro-LEDs

1-nm-thick epitaxial AlN passivation for highly efficient flexible InGaN red micro-LEDs

Abstract Highly efficient, ultrahigh-density inorganic micro-LED displays are gaining a strong position in the market for use in augmented reality glasses. When applied to electronic contact lenses with an eye-adaptive form factor, the micro-LED displays evolve into next generation augmented reality...

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Main Authors: Kiho Kong, Jun Hee Choi, Joo Hun Han, Eunsung Lee, Jinjoo Park, Nakhyun Kim, Jaewoo Lee, Chanyoung Shin, Jung Hun Park, Dong-Chul Shin, Joosung Kim, Sunil Kim, Tae-Gon Kim, Seokho Yun, Miyoung Kim
Format: Article
Language:English
Published: Nature Portfolio 2025-07-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-025-60886-z
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Summary:Abstract Highly efficient, ultrahigh-density inorganic micro-LED displays are gaining a strong position in the market for use in augmented reality glasses. When applied to electronic contact lenses with an eye-adaptive form factor, the micro-LED displays evolve into next generation augmented reality viewers. Here, we report 1-nm-thick epitaxial AlN passivation for 1.5-μm-diameter InGaN red micro-LEDs with high external quantum efficiency of 6.5% at the peak wavelength of 649 nm. The flexible form factor of the red micro-LEDs is achieved through the development of a near-complete device transfer. By overcoming the existing bottlenecks of red spectral efficiency and form factor of inorganic micro-LEDs, we believe this will pave the way for another revolution in the augmented reality and metaverse industries.
ISSN:2041-1723

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