Resistive switching mechanisms in BiFeO3 devices with YBCO and Ag as top electrodes

Resistive switching mechanisms in BiFeO3 devices with YBCO and Ag as top electrodes

The resistive switching (RS) effect in ferroelectric oxides continues to attract significant attention due to its potential applications in nonvolatile memory and neuromorphic computing devices. In this study, we investigate the RS properties of BiFeO3/YBa2Cu3O7−d (BFO/YBCO) bilayers grown on LSAT s...

Full description

Saved in:
Bibliographic Details
Main Authors: Santiago Ceballos Medina, Lorena Marín Mercado, Alexander Cardona-Rodríguez, Mario Fernando Quiñonez Penagos, César Magén, Luis Alfredo Rodríguez, Juan Gabriel Ramírez
Format: Article
Language:English
Published: Elsevier 2025-02-01
Series:Physics Open
Online Access:http://www.sciencedirect.com/science/article/pii/S2666032624000474
Tags: Add Tag
No Tags, Be the first to tag this record!

Similar Items

Similar Items