Short-Circuit Performance Analysis of Commercial 1.7 kV SiC MOSFETs Under Varying Electrical Stress

Short-Circuit Performance Analysis of Commercial 1.7 kV SiC MOSFETs Under Varying Electrical Stress

The short-circuit (SC) robustness of SiC MOSFETs is critical for high-power applications, yet 1.2 kV devices often struggle to meet the industry-standard SC withstand time (SCWT) under practical operating conditions. Despite growing interest in higher voltage classes, no prior study has systematical...

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Bibliographic Details
Main Authors: Shahid Makhdoom, Na Ren, Ce Wang, Yiding Wu, Hongyi Xu, Jiakun Wang, Kuang Sheng
Format: Article
Language:English
Published: MDPI AG 2025-01-01
Series:Micromachines
Subjects:
failure mechanisms
short-circuit (SC) robustness
silicon carbide (SiC) MOSFETs
reliability
1.7 kV SiC MOSFET
1.2 kV SiC MOSFET
Online Access:https://www.mdpi.com/2072-666X/16/1/102
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