Silicon-based tribovoltaic nanogenerators: Surface chemistry isotope effect on device performance and durability
Triboelectric nanogenerators (TENGs) are advanced devices designed to harness mechanical energy from various sources such as vibrations, friction, or shear and convert it into electrical energy. Schottky-based tribovoltaic nanogenerators (TVNGs) are a type of TENG that incorporates a semiconductor–m...
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| Language: | English |
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SpringerOpen
2025-02-01
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| Series: | Friction |
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| Online Access: | https://www.sciopen.com/article/10.26599/FRICT.2025.9440939 |
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| author | Xin Lyu Melanie Macgregor Nadim Darwish Simone Ciampi |
| author_facet | Xin Lyu Melanie Macgregor Nadim Darwish Simone Ciampi |
| author_sort | Xin Lyu |
| collection | DOAJ |
| description | Triboelectric nanogenerators (TENGs) are advanced devices designed to harness mechanical energy from various sources such as vibrations, friction, or shear and convert it into electrical energy. Schottky-based tribovoltaic nanogenerators (TVNGs) are a type of TENG that incorporates a semiconductor–metal barrier, known as a Schottky barrier, into their design. This barrier aids in rectifying the generated electrical output, eliminating the need for external current rectification circuits. Further, silicon-based Schottky TVNGs can leverage existing surface functionalization procedures to improve device output and durability. Almost without exception, these procedures commence with an oxide-free and hydrogen-terminated silicon surface (Si–H). Replacing hydrogen with its heavier isotope deuterium (Si–D) does not hinder access to established surface chemistry procedures, and based on previous reports the isotope exchange is likely to improve resistance of the non-oxide semiconductor against its anodic decomposition. In this report we have developed the optimal surface chemistry procedures for preparing Si–D surfaces and explored to what extent this isotope effect translates into improved performances and durability of Schottky TVNGs. Our findings reveal that the maximum current output of TVNGs constructed on Si–D Si (111) crystals is comparable to that of mainstream Si–H devices. Additionally, we highlight a generally higher density of surface electrical defects in Si–D compared to Si–H, and verify the contribution of a flexoelectric term to the mechanic-to-electrical energy conversion mechanism. Ultimately, our experiments demonstrate that the primary advantage of replacing hydrogen with deuterium lies in enhancing device longevity. |
| format | Article |
| id | doaj-art-f5d5ef7cd6824733811f20512e7b5864 |
| institution | Kabale University |
| issn | 2223-7690 2223-7704 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | SpringerOpen |
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| series | Friction |
| spelling | doaj-art-f5d5ef7cd6824733811f20512e7b58642025-01-15T18:14:22ZengSpringerOpenFriction2223-76902223-77042025-02-01132944093910.26599/FRICT.2025.9440939Silicon-based tribovoltaic nanogenerators: Surface chemistry isotope effect on device performance and durabilityXin Lyu0Melanie Macgregor1Nadim Darwish2Simone Ciampi3School of Molecular and Life Sciences, Curtin University, Bentley 6102, AustraliaFlinders Institute for Nanoscale Science and Technology, Flinders University, Bedford Park 5042, Australia.School of Molecular and Life Sciences, Curtin University, Bentley 6102, AustraliaSchool of Molecular and Life Sciences, Curtin University, Bentley 6102, AustraliaTriboelectric nanogenerators (TENGs) are advanced devices designed to harness mechanical energy from various sources such as vibrations, friction, or shear and convert it into electrical energy. Schottky-based tribovoltaic nanogenerators (TVNGs) are a type of TENG that incorporates a semiconductor–metal barrier, known as a Schottky barrier, into their design. This barrier aids in rectifying the generated electrical output, eliminating the need for external current rectification circuits. Further, silicon-based Schottky TVNGs can leverage existing surface functionalization procedures to improve device output and durability. Almost without exception, these procedures commence with an oxide-free and hydrogen-terminated silicon surface (Si–H). Replacing hydrogen with its heavier isotope deuterium (Si–D) does not hinder access to established surface chemistry procedures, and based on previous reports the isotope exchange is likely to improve resistance of the non-oxide semiconductor against its anodic decomposition. In this report we have developed the optimal surface chemistry procedures for preparing Si–D surfaces and explored to what extent this isotope effect translates into improved performances and durability of Schottky TVNGs. Our findings reveal that the maximum current output of TVNGs constructed on Si–D Si (111) crystals is comparable to that of mainstream Si–H devices. Additionally, we highlight a generally higher density of surface electrical defects in Si–D compared to Si–H, and verify the contribution of a flexoelectric term to the mechanic-to-electrical energy conversion mechanism. Ultimately, our experiments demonstrate that the primary advantage of replacing hydrogen with deuterium lies in enhancing device longevity.https://www.sciopen.com/article/10.26599/FRICT.2025.9440939triboelectric nanogenerators (tengs)schottky diodessilicon surface chemistryorganic monolayersisotope effectsflexoelectricity |
| spellingShingle | Xin Lyu Melanie Macgregor Nadim Darwish Simone Ciampi Silicon-based tribovoltaic nanogenerators: Surface chemistry isotope effect on device performance and durability Friction triboelectric nanogenerators (tengs) schottky diodes silicon surface chemistry organic monolayers isotope effects flexoelectricity |
| title | Silicon-based tribovoltaic nanogenerators: Surface chemistry isotope effect on device performance and durability |
| title_full | Silicon-based tribovoltaic nanogenerators: Surface chemistry isotope effect on device performance and durability |
| title_fullStr | Silicon-based tribovoltaic nanogenerators: Surface chemistry isotope effect on device performance and durability |
| title_full_unstemmed | Silicon-based tribovoltaic nanogenerators: Surface chemistry isotope effect on device performance and durability |
| title_short | Silicon-based tribovoltaic nanogenerators: Surface chemistry isotope effect on device performance and durability |
| title_sort | silicon based tribovoltaic nanogenerators surface chemistry isotope effect on device performance and durability |
| topic | triboelectric nanogenerators (tengs) schottky diodes silicon surface chemistry organic monolayers isotope effects flexoelectricity |
| url | https://www.sciopen.com/article/10.26599/FRICT.2025.9440939 |
| work_keys_str_mv | AT xinlyu siliconbasedtribovoltaicnanogeneratorssurfacechemistryisotopeeffectondeviceperformanceanddurability AT melaniemacgregor siliconbasedtribovoltaicnanogeneratorssurfacechemistryisotopeeffectondeviceperformanceanddurability AT nadimdarwish siliconbasedtribovoltaicnanogeneratorssurfacechemistryisotopeeffectondeviceperformanceanddurability AT simoneciampi siliconbasedtribovoltaicnanogeneratorssurfacechemistryisotopeeffectondeviceperformanceanddurability |