Simulation of Normally-Off Vertical GaN MOSFET with a Novel Enhanced Sidewall Channel by Selective Area Growth

Simulation of Normally-Off Vertical GaN MOSFET with a Novel Enhanced Sidewall Channel by Selective Area Growth

In the present study, a novel normally-off vertical GaN MOSFET with an enhanced AlGaN/GaN channel on the sidewall has been proposed using the technology computer-aided design (TCAD) simulation. By using the selective area growth process, the trench structure and the enhanced sidewall channel are for...

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Bibliographic Details
Main Authors: Jiyao Du, Taofei Pu, Xiaobo Li, Liuan Li, Jinping Ao, Hongwei Gao
Format: Article
Language:English
Published: MDPI AG 2025-01-01
Series:Micromachines
Subjects:
GaN MOSFET
vertical device
sidewall channel
selective area growth
simulation
Online Access:https://www.mdpi.com/2072-666X/16/1/105
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