Application and Analysis of Power IGBT Device in Three-level NPC Topology
It discussed the basic working principles of three-level topology as well as its corresponding commutation loops, defined the maximum DC-link voltage in continuous operation with given FIT curves by considering reliability requirements, and brought up a solution of three-level topology with IGBT mod...
Saved in:
| Main Authors: | ZHAO Zhenbo, WANG Heng |
|---|---|
| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2015-01-01
|
| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2015.02.005 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Parametric Modeling and Analysis of High Power IGBT Device
by: LIU Fei, et al.
Published: (2023-08-01) -
Analysis and Simulation of Stray Inductance of IGBT Module
by: WEN Chi, et al.
Published: (2016-01-01) -
Application of Low Stray Inductance Bus-bar Technology in IGBT Converter
by: CHEN Mingyi, et al.
Published: (2012-01-01) -
Research on Calculation Method of DC Side Capacitor Ripple Components for Three-level Inverter
by: ZHANG Honghao, et al.
Published: (2020-01-01) -
An online extraction method of junction temperature in IGBT devices with saturation voltage drop
by: WANG Zequn, et al.
Published: (2023-09-01)