Polarization Pruning: Reliability Enhancement of Hafnia‐Based Ferroelectric Devices for Memory and Neuromorphic Computing

Polarization Pruning: Reliability Enhancement of Hafnia‐Based Ferroelectric Devices for Memory and Neuromorphic Computing

Abstract Ferroelectric (FE) materials are key to advancing electronic devices owing to their non‐volatile properties, rapid state‐switching abilities, and low‐energy consumption. FE‐based devices are used in logic circuits, memory‐storage devices, sensors, and in‐memory computing. However, the prima...

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Bibliographic Details
Main Authors: Ryun‐Han Koo, Wonjun Shin, Jangsaeng Kim, Jiyong Yim, Jonghyun Ko, Gyuweon Jung, Jiseong Im, Sung‐Ho Park, Jae‐Joon Kim, Suraj S Cheema, Daewoong Kwon, Jong‐Ho Lee
Format: Article
Language:English
Published: Wiley 2024-11-01
Series:Advanced Science
Subjects:
Ferroelectrics
field effect transistor
memory devices
neuromorphic computing
polarization
Online Access:https://doi.org/10.1002/advs.202407729
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