Development of fin-LEDs for next-generation inorganic displays using face-selective dielectrophoretic assembly
Abstract Micro-light-emitting diodes offer vibrant colors and energy-efficient performance, holding promise for next-generation inorganic displays. However, their widespread adoption requires the development of cost-effective chips and low-defect pixelation processes. Addressing these challenges, na...
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| Main Authors: | , , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2024-11-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-024-53965-0 |
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| Summary: | Abstract Micro-light-emitting diodes offer vibrant colors and energy-efficient performance, holding promise for next-generation inorganic displays. However, their widespread adoption requires the development of cost-effective chips and low-defect pixelation processes. Addressing these challenges, nanorod-light-emitting diodes utilize inkjet and dielectrophoretic assembly techniques. Nevertheless, the small volume and edge-directed emission of nanorod-light-emitting diodes necessitate brightness and light extraction improvements. As an alternative, we propose dielectrophoretic-friendly fin-light-emitting diodes, designed to enhance brightness and light extraction efficiency through face-selective dielectrophoretic assembly technology. Our results confirm the potential for next-generation inorganic displays, with a wafer utilization ratio exceeding 90%, a vertical assembly ratio of 91.3%, and a pixel production yield of 99.93%. Moreover, blue fin-light-emitting diodes achieve an external quantum efficiency of 9.1% and a brightness of 8640 cd m−2 at 5.0 V, which, even at this early stage, are comparable to existing technologies. |
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| ISSN: | 2041-1723 |