Microresonator-enhanced quantum dot single-photon emission in GaAs-on-insulator platform
Single-photon emitters play a crucial role in integrated photonic quantum systems across various material platforms. In this study, we present a cavity-enhanced quantum dot single-photon source in a high-index contrast material platform (GaAs-on-insulator). A quantum dot is embedded in a microring r...
Saved in:
| Main Authors: | , , , , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2024-01-01
|
| Series: | Materials for Quantum Technology |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2633-4356/ad88cb |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1846142517332934656 |
|---|---|
| author | Yueguang Zhou Yuhui Yang Imad Limame Priyabrata Mudi Marcel Hohn Claudia Piccinini Battulga Munkhbat Yann Genuist Jean-Michel Gérard Julien Claudon Kresten Yvind Niels Gregersen Stephan Reitzenstein Minhao Pu |
| author_facet | Yueguang Zhou Yuhui Yang Imad Limame Priyabrata Mudi Marcel Hohn Claudia Piccinini Battulga Munkhbat Yann Genuist Jean-Michel Gérard Julien Claudon Kresten Yvind Niels Gregersen Stephan Reitzenstein Minhao Pu |
| author_sort | Yueguang Zhou |
| collection | DOAJ |
| description | Single-photon emitters play a crucial role in integrated photonic quantum systems across various material platforms. In this study, we present a cavity-enhanced quantum dot single-photon source in a high-index contrast material platform (GaAs-on-insulator). A quantum dot is embedded in a microring resonator with a quality factor of approximately 9000, where the cavity-induced light enhancement results in a spontaneous emission acceleration factor of around 2.6, and we achieve a $g^{(2)}(0)$ as low as 0.03 ± 0.02 and post-selected two-photon interference visibility of 51.7 $\%\pm3.2\%$ for the single-photon source. This demonstration shows the potential of the GaAs-on-Insulator platform for scalable on-chip quantum information processing. |
| format | Article |
| id | doaj-art-eff50f1cc8ab446797f6fe66a92d706b |
| institution | Kabale University |
| issn | 2633-4356 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials for Quantum Technology |
| spelling | doaj-art-eff50f1cc8ab446797f6fe66a92d706b2024-12-03T10:51:29ZengIOP PublishingMaterials for Quantum Technology2633-43562024-01-014404540110.1088/2633-4356/ad88cbMicroresonator-enhanced quantum dot single-photon emission in GaAs-on-insulator platformYueguang Zhou0https://orcid.org/0000-0002-5652-2911Yuhui Yang1Imad Limame2Priyabrata Mudi3https://orcid.org/0009-0003-3806-2047Marcel Hohn4Claudia Piccinini5Battulga Munkhbat6Yann Genuist7Jean-Michel Gérard8Julien Claudon9Kresten Yvind10Niels Gregersen11Stephan Reitzenstein12https://orcid.org/0000-0002-1381-9838Minhao Pu13https://orcid.org/0000-0002-4993-4299DTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark , Ørsteds Plads 343, 2800 Kgs. Lyngby, Denmark; Institute of Solid State Physics , Technische Universität Berlin, 10623 Berlin, GermanyInstitute of Solid State Physics , Technische Universität Berlin, 10623 Berlin, GermanyInstitute of Solid State Physics , Technische Universität Berlin, 10623 Berlin, GermanyInstitute of Solid State Physics , Technische Universität Berlin, 10623 Berlin, GermanyInstitute of Solid State Physics , Technische Universität Berlin, 10623 Berlin, GermanyDTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark , Ørsteds Plads 343, 2800 Kgs. Lyngby, DenmarkDTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark , Ørsteds Plads 343, 2800 Kgs. Lyngby, DenmarkUniv. Grenoble Alpes , CNRS, Grenoble INP, Institut Néel, ‘Nanophysique et semiconducteurs’ group, F-38000 Grenoble, FranceUniv. Grenoble Alpes , CEA, Grenoble INP, IRIG, PHELIQS, ‘Nanophysique et semiconducteurs’ group, F-38000 Grenoble, FranceUniv. Grenoble Alpes , CEA, Grenoble INP, IRIG, PHELIQS, ‘Nanophysique et semiconducteurs’ group, F-38000 Grenoble, FranceDTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark , Ørsteds Plads 343, 2800 Kgs. Lyngby, DenmarkDTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark , Ørsteds Plads 343, 2800 Kgs. Lyngby, DenmarkInstitute of Solid State Physics , Technische Universität Berlin, 10623 Berlin, GermanyDTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark , Ørsteds Plads 343, 2800 Kgs. Lyngby, DenmarkSingle-photon emitters play a crucial role in integrated photonic quantum systems across various material platforms. In this study, we present a cavity-enhanced quantum dot single-photon source in a high-index contrast material platform (GaAs-on-insulator). A quantum dot is embedded in a microring resonator with a quality factor of approximately 9000, where the cavity-induced light enhancement results in a spontaneous emission acceleration factor of around 2.6, and we achieve a $g^{(2)}(0)$ as low as 0.03 ± 0.02 and post-selected two-photon interference visibility of 51.7 $\%\pm3.2\%$ for the single-photon source. This demonstration shows the potential of the GaAs-on-Insulator platform for scalable on-chip quantum information processing.https://doi.org/10.1088/2633-4356/ad88cbquantum dotsingle-photon sourcePurcell effectMicroresonator |
| spellingShingle | Yueguang Zhou Yuhui Yang Imad Limame Priyabrata Mudi Marcel Hohn Claudia Piccinini Battulga Munkhbat Yann Genuist Jean-Michel Gérard Julien Claudon Kresten Yvind Niels Gregersen Stephan Reitzenstein Minhao Pu Microresonator-enhanced quantum dot single-photon emission in GaAs-on-insulator platform Materials for Quantum Technology quantum dot single-photon source Purcell effect Microresonator |
| title | Microresonator-enhanced quantum dot single-photon emission in GaAs-on-insulator platform |
| title_full | Microresonator-enhanced quantum dot single-photon emission in GaAs-on-insulator platform |
| title_fullStr | Microresonator-enhanced quantum dot single-photon emission in GaAs-on-insulator platform |
| title_full_unstemmed | Microresonator-enhanced quantum dot single-photon emission in GaAs-on-insulator platform |
| title_short | Microresonator-enhanced quantum dot single-photon emission in GaAs-on-insulator platform |
| title_sort | microresonator enhanced quantum dot single photon emission in gaas on insulator platform |
| topic | quantum dot single-photon source Purcell effect Microresonator |
| url | https://doi.org/10.1088/2633-4356/ad88cb |
| work_keys_str_mv | AT yueguangzhou microresonatorenhancedquantumdotsinglephotonemissioningaasoninsulatorplatform AT yuhuiyang microresonatorenhancedquantumdotsinglephotonemissioningaasoninsulatorplatform AT imadlimame microresonatorenhancedquantumdotsinglephotonemissioningaasoninsulatorplatform AT priyabratamudi microresonatorenhancedquantumdotsinglephotonemissioningaasoninsulatorplatform AT marcelhohn microresonatorenhancedquantumdotsinglephotonemissioningaasoninsulatorplatform AT claudiapiccinini microresonatorenhancedquantumdotsinglephotonemissioningaasoninsulatorplatform AT battulgamunkhbat microresonatorenhancedquantumdotsinglephotonemissioningaasoninsulatorplatform AT yanngenuist microresonatorenhancedquantumdotsinglephotonemissioningaasoninsulatorplatform AT jeanmichelgerard microresonatorenhancedquantumdotsinglephotonemissioningaasoninsulatorplatform AT julienclaudon microresonatorenhancedquantumdotsinglephotonemissioningaasoninsulatorplatform AT krestenyvind microresonatorenhancedquantumdotsinglephotonemissioningaasoninsulatorplatform AT nielsgregersen microresonatorenhancedquantumdotsinglephotonemissioningaasoninsulatorplatform AT stephanreitzenstein microresonatorenhancedquantumdotsinglephotonemissioningaasoninsulatorplatform AT minhaopu microresonatorenhancedquantumdotsinglephotonemissioningaasoninsulatorplatform |